FDB14N30
Power Field-Effect Transistor, 14A I(D), 300V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263FDB14N30
Power Field-Effect Transistor, 14A I(D), 300V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
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Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
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About packaging
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FDB14N30 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.Features • 14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V • Low gate charge ( typical 18 nC) • Low Crss ( typical 17 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
Key Features
- 14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V
- Low gate charge ( typical 18 nC)
- Low Crss ( typical 17 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | Yes | Part Life Cycle Code | Active |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Avalanche Energy Rating (Eas) | 330 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 300 V |
Drain Current-Max (ID) | 14 A | Drain-source On Resistance-Max | 0.29 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-263 |
JESD-30 Code | R-PSSO-G2 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 56 A | Qualification Status ! | Not Qualified |
Surface Mount ! | YES | Terminal Form ! | GULL WING |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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