FQD6N40CTM
Trans MOSFET N-CH 400V 4.5A 3-Pin(2+Tab) DPAK T/RFQD6N40CTM
Trans MOSFET N-CH 400V 4.5A 3-Pin(2+Tab) DPAK T/R
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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FQD6N40CTM DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
Elevate your power supply designs with the FQD6N40CTM MOSFET, a game-changing semiconductor device that prioritizes efficiency and performance. Thanks to its innovative planar stripe and DMOS technology, this MOSFET offers unmatched on-state resistance and switching capabilities, making it an ideal choice for demanding applications like power factor correction and lighting ballasts. Invest in the FQD6N40CTM for unparalleled reliability and efficiency in your electronic projects
Key Features
- High isolation voltage (5000 Vrms)
- Fast recovery time (Typ. 100 ns @ 10V, 150 ns @ 5V)
- Low capacitance-to-ground (Typ. 2pF)
- Hermetic epoxy encapsulation for added durability
Application
- High voltage MOSFET transistor
- Efficient power management
- Wide range of applications
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Status | Active | CAD Models | |
Compliance | PbAHP | Package Type | DPAK-3 / TO-252-3 |
Case Outline | 369AS | MSL Type | 1 |
MSL Temp (°C) | 260 | Container Type | REEL |
Container Qty. | 2500 | ON Target | Y |
Channel Polarity | N-Channel | Configuration | Single |
V(BR)DSS Min (V) | 400 | VGS Max (V) | ±30 |
VGS(th) Max (V) | 4 | ID Max (A) | 4.5 |
PD Max (W) | 48 | RDS(on) Max @ VGS = 10 V (mΩ) | 1000 |
Qg Typ @ VGS = 10 V (nC) | 16 | Ciss Typ (pF) | 480 |
Pricing ($/Unit) | $0.4788Sample |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is FQD6N40CTM?
The FQD6N40CTM is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Fairchild Semiconductor. It is a power MOSFET that is ideal for use in power management applications such as switch mode power supplies, motor control, and electronic ballasts.
How Does FQD6N40CTM Work?
The FQD6N40CTM operates by controlling the flow of current between the source and drain terminals using a voltage applied to the gate terminal. When a sufficient voltage is applied to the gate, the MOSFET allows current to flow through, enabling it to act as a switch or a variable resistor in electronic circuits.
How Many Pins does FQD6N40CTM have and What are the Functions of the Pinout Configuration?
The FQD6N40CTM is housed in a standard TO-252 package. The pinout configuration includes:
- GATE: This pin is used to control the flow of current between the source and drain terminals.
- SOURCE: This pin is the connection for the source terminal.
- DRAIN: This pin is the connection for the drain terminal.
What are the Pros and Cons of FQD6N40CTM?
Pros:
- High Power Handling: Capable of handling high currents and voltages, making it suitable for power applications.
- Fast Switching Speed: Enables efficient switching in power management circuits.
- Low On-Resistance: Results in low conduction losses and improved efficiency.
- Compact Package: The TO-252 package is space-efficient and easy to mount on a printed circuit board.
Cons:
- Gate Drive Requirement: Requires proper gate drive considerations for optimal performance.
- Heat Dissipation: May require a heatsink for high-power applications to manage thermal dissipation.
- Drive Voltage Limitation: Requires attention to voltage limitations for gate drive signals.
Are There Any Equivalents/Alternatives to FQD6N40CTM for Recommendation?
- The IRF9Z24N from Infineon and the FQP6N40C from ON Semiconductor are alternatives to the FQD6N40CTM with similar specifications.
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