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FQU30N06L
Silicon N-Channel MOSFET Transistor with 24A Drain Current, 60V Voltage Rating, and 0.047ohm Resistance
FQU30N06L
Silicon N-Channel MOSFET Transistor with 24A Drain Current, 60V Voltage Rating, and 0.047ohm Resistance
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FQU30N06L DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The FQU30N06L is a N-Channel MOSFET transistor designed for high power applications. It is manufactured by Fairchild Semiconductor and features a maximum drain-source voltage of 60V and a continuous drain current of 30A. The transistor has a low on-resistance of 0.03 ohms, making it suitable for high efficiency power switching applications.The FQU30N06L is constructed using advanced trench technology, which allows for low gate charge and fast switching speeds. This makes it ideal for use in power conversion applications such as DC-DC converters and motor control circuits.The transistor also features a low gate threshold voltage of 2 to 4V, allowing for easy interfacing with microcontrollers or other control circuits. It has a TO-252 (DPAK) package, which provides a compact and easy-to-mount form factor.
Key Features
- 30A continuous drain current
- 60V drain-source voltage
- 0.057 ohm RDS(on) at VGS=10V
- Low gate charge
- Fast switching speed
- Low capacitance
- High ruggedness
- TO-220 package
Application
- Switching power supplies
- Motor control
- DC-DC converters
- Inverter circuits
- Battery management systems
- Automotive electronics
- Industrial control systems
- Solar inverters
- Uninterruptible power supplies
- Electric vehicle charging systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | MOSFET | Technology | Si |
| Mounting Style | Through Hole | Package / Case | TO-251-3 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 24 A |
| Rds On - Drain-Source Resistance | 39 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
| Pd - Power Dissipation | 2.5 W | Channel Mode | Enhancement |
| Series | FQU30N06 | Brand | onsemi / Fairchild |
| Configuration | Single | Fall Time | 110 ns |
| Height | 6.3 mm | Length | 6.8 mm |
| Product Type ! | MOSFET | Rise Time ! | 210 ns |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 55 ns | Typical Turn-On Delay Time | 15 ns |
| Width | 2.5 mm | Unit Weight | 0.011993 oz |
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