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HFA3127B
High-quality RF transistor for UHF applications
HFA3127B
High-quality RF transistor for UHF applications
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All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
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Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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HFA3127B DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $14.087 | $14.09 |
| 200 | $5.453 | $1,090.60 |
| 500 | $5.260 | $2,630.00 |
| 1000 | $5.166 | $5,166.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications.Features• NPN Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . 130• NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V• PNP Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz• PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 60• PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 20V• Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB• Collector-to-Collector Leakage. . . . . . . . . . . . . . . . . <1pA• Complete Isolation Between Transistors• Pin Compatible with Industry Standard 3XXX Series ArraysApplications• VHF/UHF Amplifiers• VHF/UHF Mixers• IF Converters• Synchronous Detectors
Key Features
- NPN Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
- NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . 130
- NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V
- PNP Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
- PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 60
- PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 20V
- Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
- Collector-to-Collector Leakage. . . . . . . . . . . . . . . . . <1pA
- Complete Isolation Between Transistors
- Pin Compatible with Industry Standard 3XXX Series
- Arrays
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | Bipolar Transistors - BJT | Transistor Polarity | NPN |
| Configuration | Quint | Collector- Emitter Voltage VCEO Max | 8 V |
| Collector- Base Voltage VCBO | 12 V | Emitter- Base Voltage VEBO | 5.5 V |
| Maximum DC Collector Current | 65 mA | Pd - Power Dissipation | 150 mW |
| Gain Bandwidth Product fT | 8 GHz | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature ! | + 125 C | Brand | onsemi / Fairchild |
| DC Collector/Base Gain hfe Min | 40 at 10 mA, 2 V | Product Type ! | BJTs - Bipolar Transistors |
| Subcategory | Transistors | Technology | Si |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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