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IRF2807STRLPBF
The total gate charge of IRF2807STRLPBF is 106.7nC, ensuring rapid and precise control over the MOSFET's switching characteristics
IRF2807STRLPBF
The total gate charge of IRF2807STRLPBF is 106.7nC, ensuring rapid and precise control over the MOSFET's switching characteristics
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Manufacturer Part # : IRF2807STRLPBF
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Package/Case: D2PAK-3
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Brand: Infineon Technologies
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Product Categories : Single FETs, MOSFETs
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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IRF2807STRLPBF DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
Featuring a TO-262 package, the IRF2807STRLPBF power MOSFET is housed in a rugged and reliable casing designed to dissipate heat efficiently. This allows the device to operate at high currents without overheating, giving users peace of mind when it comes to performance and durability. With a junction-to-case thermal resistance of 0.5 °C/W, this MOSFET further enhances its thermal performance, ensuring reliable operation even under challenging conditions
Key Features
- High efficiency performance
- Rapid switching and low power loss
- Robust design for high reliability
- Compact size and low profile
- Silicon-based device with fast recovery
- Low voltage gate drive for efficient operation
Application
- Durable automotive
uses
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| functionalPacking | TAPE & REEL LEFT | addProductInfo | Planar Mosfet - D2Pak |
| packageNameMarketing | D2PAK | msl | 1 |
| halogenFree | yes | customerInfo | STANDARD |
| fgr | F4X | productClassification | COM |
| productStatusInfo | active | hfgr | P |
| packageName | D2PAK | pbFree | yes |
| moistureProtPack | NON DRY | fourBlockPackageName | PG-TO263-3-901 |
| rohsCompliant | yes | opn | IRF2807STRLPBF |
| completelyPbFree | no | sapMatnrSali | SP001564210 |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is IRF2807STRLPBF?
The IRF2807STRLPBF is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed by Infineon Technologies. It is ideal for high power switching applications in various electronic devices, such as power supplies, motor control, and automotive systems.
How Does IRF2807STRLPBF Work?
The IRF2807STRLPBF operates as a voltage-controlled switch, allowing high current to flow through the device when a sufficient voltage is applied to the gate terminal. It is designed to handle high power levels with low on-state resistance and fast switching speeds, making it suitable for efficient power management.
How Many Pins does IRF2807STRLPBF have and What are the Functions of the Pinout Configuration?
The IRF2807STRLPBF is housed in a TO-263 package with a tab. The pinout configuration includes:
- GATE: Gate control input for turning the MOSFET on and off.
- DRAIN: Output terminal for the MOSFET's current flow.
- SOURCE: Connection to the ground or return path for the MOSFET's current.
- Tab: Thermal connection for heat dissipation.
What are the Pros and Cons of IRF2807STRLPBF?
Pros:
- High Power Handling: Capable of handling high currents and voltages for power applications.
- Low On-State Resistance: Efficient power management with minimal voltage drop.
- Fast Switching Speeds: Enables rapid on/off transitions for responsive power control.
- Thermal Tab: Provides a convenient thermal connection for heat dissipation.
Cons:
- Gate Drive Voltage: Requires a sufficient gate voltage for proper switching operation.
- Drive Circuit Complexity: Gate drive circuitry may need to be carefully designed for optimal performance.
- Heat Management: High-power applications may require additional consideration for thermal management.
Are There Any Equivalents/Alternatives to IRF2807STRLPBF for Recommendation?
- The IRF3205 from Infineon Technologies is a comparable power MOSFET with similar specifications and performance.
- Alternatives to the IRF2807STRLPBF include the FDP8870 from Fairchild Semiconductor and the HUF75645P3 from Vishay Intertechnology.
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