IRF3205SPBF
Efficient power transistor for various applicationsIRF3205SPBF
Efficient power transistor for various applications
Quality Assurance
Quality Assurance
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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IRF3205SPBF DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The IRF3205SPBF comes in a TO-263AB package with LEAD FREE, PLASTIC, D2PAK-3 configuration, making it easy to integrate into your designs while ensuring environmental compliance. Whether you're designing power supplies, motor controls, or any other high-current circuit, this transistor offers the performance and reliability you need
Key Features
- High-power density packaging
- Improved gate-source threshold
- Fast turn-on and turn-off speed
- High-frequency stability ensured
- Suitable for automotive use
- Precise current limiting control
Application
- Automotive uses
- Power systems
- Battery systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TO-252-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 55 V |
Id - Continuous Drain Current | 110 A | Rds On - Drain-Source Resistance | 8 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Qg - Gate Charge | 97.3 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 175 C |
Pd - Power Dissipation | 200 W | Channel Mode | Enhancement |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 65 ns | Height | 2.3 mm |
Length | 6.5 mm | Product Type ! | MOSFET |
Rise Time ! | 101 ns | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | HEXFET Power MOSFET | Typical Turn-Off Delay Time | 50 ns |
Typical Turn-On Delay Time | 14 ns | Width | 6.22 mm |
Part # Aliases | SP001576776 | Unit Weight | 0.011640 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is IRF3205SPBF?
The IRF3205SPBF is a power MOSFET transistor designed by Infineon Technologies. It is suitable for use in various high-power applications such as motor control, power supplies, and automotive systems.
How Does IRF3205SPBF Work?
The IRF3205SPBF works by controlling the flow of power within a circuit. As a power MOSFET, it can efficiently switch high currents and high voltages, making it suitable for power management applications. When properly controlled, it allows or interrupts the flow of power through the circuit, offering a high level of control and efficiency.
How Many Pins does IRF3205SPBF have and What are the Functions of the Pinout Configuration?
The IRF3205SPBF is housed in a TO-220AB package with three pins. The pinout configuration includes:
- GATE: The gate pin, which controls the flow of power through the MOSFET.
- DRAIN: The drain pin, through which the power flows when the MOSFET is activated.
- SOURCE: The source pin, which completes the circuit for the power flow.
What are the Pros and Cons of IRF3205SPBF?
Pros:
- High Power Handling: Capable of handling high currents and voltages, making it suitable for power applications.
- Efficient Switching: Provides efficient switching for power management and motor control.
- Reliable: Offers reliability and durability in demanding environments.
- Widely Used: Commonly used in various power electronic applications with established performance and characteristics.
Cons:
- Drive Voltage: May require higher gate drive voltage compared to other types of MOSFETs.
- Heat Dissipation: High power handling may require careful consideration of heat dissipation for optimal performance.
Are There Any Equivalents/Alternatives to IRF3205SPBF for Recommendation?
- The IRF1405PBF from Infineon and the STP80NF55L-06 from STMicroelectronics are alternatives with similar power handling capabilities.
- Equivalents to the IRF3205SPBF include the AUIRF3205 from Vishay and the FCPF320N80Z from Fairchild Semiconductor.
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