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IRF5852TRPBF
2.7A 20V Dual N-Channel MOSFET TransistorIRF5852TRPBF
2.7A 20V Dual N-Channel MOSFET Transistor
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Manufacturer Part # : IRF5852TRPBF
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Package/Case: SOP-6
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Part Status : Discontinued
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Brand: Infineon Technologies
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Product Categories : FET, MOSFET Arrays
Quality Assurance
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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IRF5852TRPBF DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
IRF5852TRPBF is a MOSFET transistor manufactured by Infineon Technologies. It belongs to the category of N-channel enhancement mode power MOSFETs. This particular MOSFET has a maximum drain-source voltage rating of 20V and a continuous drain current of 2.7A. The package type for IRF5852TRPBF is a 6-pin Thin Small Outline Package (TSOP). This package provides a compact and efficient design for surface mount applications. The pin configuration includes the gate, drain, and source pins necessary for proper connectivity and operation in electronic circuits. This MOSFET features low on-resistance, allowing for efficient power management and reduced power dissipation in applications such as DC-DC converters, power management modules, and load switches. The low threshold voltage of the MOSFET also enables it to be easily driven by logic level signals in digital circuits.
Key Features
- Power MOSFET with N-Channel
- VDS of 100V and Continuous Drain Current of 15A
- Low RDS(on) of 0.043 ohm
- Fast switching speed and high performance
- Designed for high efficiency power management applications
- RoHS compliant and halogen-free
Application
- Switch mode power supplies
- Motor control circuits
- DC/DC converters
- LED lighting
- Battery charging circuits
- Industrial automation
- Consumer electronics
- Telecommunications
- Automotive electronics
- Renewable energy systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | TSOP-6 | Transistor Polarity | N-Channel |
| Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 2.7 A | Rds On - Drain-Source Resistance | 90 mOhms |
| Vgs - Gate-Source Voltage | - 12 V, + 12 V | Qg - Gate Charge | 4 nC |
| Pd - Power Dissipation | 960 mW | Brand | Infineon Technologies |
| Configuration | Dual | Height | 1.1 mm |
| Length | 3 mm | Moisture Sensitive | Yes |
| Product | MOSFET Small Signal | Product Type ! | MOSFET |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 2 N-Channel | Width | 1.5 mm |
| Part # Aliases | SP001554076 | Unit Weight | 0.000705 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is IRF5852TRPBF?
The IRF5852TRPBF is a power MOSFET transistor designed by Infineon Technologies. It is ideal for high-power switching applications, such as power supplies, motor control, and DC-DC converters.
How Does IRF5852TRPBF Work?
The IRF5852TRPBF works by controlling the flow of current between the drain and source terminals using an electric field. When a sufficient voltage is applied to the gate terminal, the MOSFET allows current to flow, effectively acting as a switch for high-power circuits.
How Many Pins does IRF5852TRPBF have and What are the Functions of the Pinout Configuration?
The IRF5852TRPBF is housed in a TO-263-3 package. The pinout configuration includes:
- GATE: Control terminal for the MOSFET gate.
- DRAIN: Terminal for the high-power current flow.
- SOURCE: Terminal for the return path of the current.
What are the Pros and Cons of IRF5852TRPBF?
Pros:
- High Power Handling: Capable of handling high current and voltage levels.
- Fast Switching Speed: Enables efficient power control in high-frequency applications.
- Low On-Resistance: Minimizes power dissipation and improves efficiency.
- Robustness: Designed to withstand high power and temperature levels.
- Compact Package: The TO-263-3 package provides a good balance of power handling and thermal performance.
Cons:
- Gate Drive Voltage: Requires a sufficient gate drive voltage for proper switching operation.
- Gate Capacitance: May require attention to gate drive circuit design for high-frequency applications.
- Heat Dissipation: High-power applications may require additional heat sinking for thermal management.
Are There Any Equivalents/Alternatives to IRF5852TRPBF for Recommendation?
- The IRFP460 from Infineon Technologies is a similar power MOSFET with comparable specifications.
- Alternatives to the IRF5852TRPBF include the FDP7030L from Fairchild Semiconductor and the STP55NF06L from STMicroelectronics.
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