IRF612

Name: IRF612
Rating: 4.5 (10 reviews)

IRF612 MOSFET: Offers a robust 200V breakdown voltage alongside a 2.6A current handling capacity, enclosed in a TO-220AB package

3,546 Effective Inventory

IRF612

Effective Inventory3,546

IRF612 MOSFET: Offers a robust 200V breakdown voltage alongside a 2.6A current handling capacity, enclosed in a TO-220AB package

Manufacturer Part # : IRF612
Package/Case: TO-220
Brand: Harris Corporation
Product Categories : Single FETs, MOSFETs

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

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About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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IRF612 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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Please submit RFQ for IRF612 or email to us: Email: [email protected], we will contact you in 12 hours.

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Details

What sets the IRF612 apart is its high input capacitance of 1200pF, making it well-suited for high-frequency switching operations. The gate threshold voltage of 2-4V ensures compatibility with a wide range of logic levels, providing flexibility in design and implementation. With a maximum power dissipation of 2.0W and a maximum junction temperature of 150°C, the IRF612 offers reliable performance even under high-power conditions

Key Features

Reliable operation in harsh environments
Low electromagnetic interference
High surge withstand capability
Suitable for power supply applications

Application

Compact design
High power density
Thermal management

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code	No	Rohs Code	No
Part Life Cycle Code	Active	Reach Compliance Code
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	200 V	Drain Current-Max (ID)	2.6 A
Drain-source On Resistance-Max	2.4 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e0	Moisture Sensitivity Level	NOT SPECIFIED
Number of Elements	1	Number of Terminals	3
Operating Mode !	ENHANCEMENT MODE	Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR	Package Style	FLANGE MOUNT
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	6.5 A	Qualification Status !	COMMERCIAL
Surface Mount !	NO	Terminal Finish	TIN LEAD
Terminal Form !	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification IRF612 PDF Download

FAQs

What is IRF612?

The IRF612 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for general-purpose switching applications. It is commonly used in power supplies, motor control, and other high-power switching circuits.

How Does IRF612 Work?

The IRF612 operates as a voltage-controlled switch. When a sufficient voltage is applied to the gate terminal, it allows current to flow from the source to the drain, essentially turning on the MOSFET. This makes it suitable for applications where high current and voltage switching are required.

How Many Pins does IRF612 have and What are the Functions of the Pinout Configuration?

The IRF612 is typically housed in a TO-220 package. The pinout configuration includes:

G (Gate): Control pin for turning the MOSFET on and off.
D (Drain): Output pin where the current flows out.
S (Source): Input pin where the current flows in.

What are the Pros and Cons of IRF612?

Pros:

High Power Handling: Capable of handling high currents and voltages.
Fast Switching Speed: Enables rapid on/off switching transitions.
Low On-Resistance: Results in minimal voltage drop when the MOSFET is on.
Wide Operating Voltage Range: Suitable for various voltage levels in applications.

Cons:

Gate Voltage Control: Requires a voltage above a certain threshold to turn on, which may need appropriate driving circuitry.
Heat Dissipation: High power handling capability may lead to heat generation, requiring proper heat sinking.

Are There Any Equivalents/Alternatives to IRF612 for Recommendation?

Alternatives to the IRF612 include the IRF540, IRF3205, and IRFP250N power MOSFETs from various manufacturers.
Equivalent parts to the IRF612 may include the STP60NF06FP from STMicroelectronics and the FQP30N06L from Fairchild Semiconductor.

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