IRF710

N-Channel MOSFET transistor rated for 400V and 2A with TO-220AB package
6,907 Effective Inventory

IRF710

Effective Inventory6,907

N-Channel MOSFET transistor rated for 400V and 2A with TO-220AB package

  • Manufacturer Part # : IRF710

  • Package/Case: TO-220-3

  • Brand: Onsemi

  • Product Categories : Single FETs, MOSFETs

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Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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IRF710 DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $0.408 $0.41
200 $0.158 $31.60
500 $0.152 $76.00
1000 $0.150 $150.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

Rapid Quote

Please submit RFQ for IRF710 or email to us: Email: [email protected], we will contact you in 12 hours.

Details

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17444.Features • 2.0A, 400V • rDS(ON) = 3.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Key Features

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements

    • Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Product Category ! MOSFET Technology Si
    Mounting Style Through Hole Package / Case TO-220-3
    Transistor Polarity N-Channel Number of Channels 1 Channel
    Vds - Drain-Source Breakdown Voltage 400 V Id - Continuous Drain Current 2 A
    Rds On - Drain-Source Resistance 3.6 Ohms Vgs - Gate-Source Voltage - 20 V, + 20 V
    Minimum Operating Temperature - 55 C Maximum Operating Temperature ! + 150 C
    Pd - Power Dissipation 36 W Channel Mode Enhancement
    Series IRF710 Brand onsemi / Fairchild
    Configuration Single Fall Time 11 ns
    Height 16.3 mm Length 10.67 mm
    Product Type ! MOSFET Rise Time ! 10 ns
    Subcategory MOSFETs Transistor Type 1 N-Channel
    Typical Turn-Off Delay Time 21 ns Typical Turn-On Delay Time 8 ns
    Width 4.7 mm Unit Weight 0.068784 oz

    Datasheet PDF

    Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

    Preliminary Specification IRF710 PDF Download

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