IRF7331
Silicon N-Channel Small Signal Field-Effect Transistor with Metal-oxide Semiconductor FET, IRF7331, MS-012AA, SO-8IRF7331
Silicon N-Channel Small Signal Field-Effect Transistor with Metal-oxide Semiconductor FET, IRF7331, MS-012AA, SO-8
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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IRF7331 DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The IRF7331 is a MOSFET, or Metal-Oxide-Semiconductor Field-Effect Transistor, designed for use in electronic circuits that require switching or amplification of signals. This specific MOSFET is an N-channel type, meaning it conducts electricity when a positive voltage is applied to its gate terminal relative to its source terminal. It has a maximum voltage rating of 20 volts and can handle a continuous current of up to 7 amperes, making it suitable for a wide range of low to medium power applications. The IRF7331 comes in an 8-pin Small Outline (SO) package, which is compact and easy to mount on a circuit board. This packaging also helps dissipate heat generated during operation, ensuring the MOSFET remains within its safe operating temperature range. This device is commonly used in power management circuits, motor control systems, LED lighting, and other applications where efficient switching and low power dissipation are important. Its low on-resistance and fast switching speeds make it a versatile component for many electronic designs.
Key Features
- MOSFET transistor
- VDS=30V, ID=30A
- Low on-resistance
- Advanced process technology
- Fast switching speed
- High performance
- Low gate charge
- Perfect for high-frequency applications
- RoHS compliant
- Halogen-free
Application
- DC-DC converters
- Battery powered devices
- Motor control
- Power management systems
- LED lighting
- Home appliances
- Industrial equipment
- Automotive electronics
- Solar power systems
- Telecommunication systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Package | SO-8 | Polarity | N+N |
Tj max | 150.0 °C | VDS max | 20.0 V |
VGS max | 12.0 V | RthJA max | 62.5 K/W |
Moisture Sensitivity Level | 1 | Ptot max | 2.0 W |
RDS (on) max | 30.0 mΩ | VGS(th) max | 1.2 V |
VGS(th) min | 0.6 V | ID max | 7.0 A |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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