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IRF7341Q
N-Channel Power MOSFET with 5.1A current rating and 55V voltage rating
IRF7341Q
N-Channel Power MOSFET with 5.1A current rating and 55V voltage rating
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Service & Packaging
Service & Packaging
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IRF7341Q DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The IRF7341Q is a Power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) that belongs to the IRF7341 series. It is specifically designed for high-speed switching applications in power supplies, motor control, and other high-current applications. It features a low on-state resistance of 0.12 ohms, which allows for efficient power handling and reduced power dissipation.The IRF7341Q is a P-channel MOSFET with a drain-source voltage rating of 55V and a continuous drain current rating of 10A. It has a maximum gate-source voltage of +/- 20V, making it compatible with standard logic levels. The MOSFET is housed in a TO-262 package, which provides good thermal performance and ease of mounting.This device is reliable and robust, with a junction temperature rating of up to 150°C. It also has built-in protection features, such as over-current and over-temperature protection, to ensure safe operation under various conditions.
Key Features
- Logic-level gate drive
- Low on-resistance
- Fast switching speed
- Low thermal resistance
- High current capability
- Low power dissipation
- RoHS compliant
- Easy to use in various applications
- Available in dual N-Channel MOSFET configuration
Application
- Power Management systems
- Motor Control systems
- Switching applications
- Battery charging circuits
- DC-DC converters
- LED lighting applications
- Audio amplifiers
- Automotive electronics
- Industrial automation
- Robotics
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | No | Part Life Cycle Code | Obsolete |
| Part Package Code | SOIC | Pin Count ! | 8 |
| Reach Compliance Code | ECCN Code | EAR99 | |
| HTS Code ! | 8541.29.00.95 | Additional Feature ! | HIGH RELIABILITY |
| Avalanche Energy Rating (Eas) | 140 mJ | Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 55 V | Drain Current-Max (Abs) (ID) | 5.1 A |
| Drain Current-Max (ID) | 5.1 A | Drain-source On Resistance-Max | 0.05 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | MS-012AA |
| JESD-30 Code | R-PDSO-G8 | JESD-609 Code | e0 |
| Moisture Sensitivity Level | 1 | Number of Elements | 2 |
| Number of Terminals | 8 | Operating Mode ! | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 1.7 W |
| Pulsed Drain Current-Max (IDM) | 42 A | Qualification Status ! | Not Qualified |
| Surface Mount ! | YES | Terminal Finish | TIN LEAD |
| Terminal Form ! | GULL WING | Terminal Position | DUAL |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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