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IRF7807ZPBF
IRF7807ZPBF is a MOSFET with a maximum voltage rating of 30V and a current capacity of 11A, featuring a low on-resistance of 13.8mΩ at 11A and 10V
IRF7807ZPBF
IRF7807ZPBF is a MOSFET with a maximum voltage rating of 30V and a current capacity of 11A, featuring a low on-resistance of 13.8mΩ at 11A and 10V
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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IRF7807ZPBF DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $1.062 | $1.06 |
| 200 | $0.412 | $82.40 |
| 500 | $0.398 | $199.00 |
| 1000 | $0.390 | $390.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
IRF7807ZPBF is a high-performance N-channel MOSFET designed for a wide range of applications in power management and switching circuits. This component has a maximum drain-source voltage of 30V and a continuous drain current of 11A at a temperature of 25°C. The power dissipation of IRF7807ZPBF is rated at 2.5W at 25°C, making it suitable for moderate power requirements. The package type for IRF7807ZPBF is a surface-mount 8-SO (Small Outline) which allows for easy installation on printed circuit boards and saves space in compact designs. The small form factor and low profile of the 8-SO package make it ideal for applications where board space is limited. With its low on-resistance and high current handling capability, IRF7807ZPBF provides efficient power management and reliable switching performance. It is commonly used in DC-DC converters, motor controls, battery management systems, and other power electronics applications where high efficiency and robustness are essential.
Key Features
- Low on-resistance
- Fast switching speed
- Low gate threshold voltage
- High input impedance
- Logic-level compatible
- Low input capacitance
- RoHS compliant
- Compatible with a wide range of applications
- Small form factor for space-saving designs
Application
- Power management
- Motor control
- Battery charging systems
- LED lighting
- Switching regulators
- DC-DC converters
- Solar power systems
- Voltage regulation circuits
- Industrial automation
- Telecommunication equipment
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | Yes | Rohs Code | Yes |
| Part Life Cycle Code | Transferred | Part Package Code | SOIC |
| Pin Count ! | 8 | Reach Compliance Code | |
| ECCN Code | EAR99 | Avalanche Energy Rating (Eas) | 63 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 30 V |
| Drain Current-Max (Abs) (ID) | 11 A | Drain Current-Max (ID) | 11 A |
| Drain-source On Resistance-Max | 0.0138 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | MS-012AA | JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 8 |
| Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 2.5 W |
| Pulsed Drain Current-Max (IDM) | 88 A | Qualification Status ! | Not Qualified |
| Surface Mount ! | YES | Terminal Finish | MATTE TIN |
| Terminal Form ! | GULL WING | Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON | Manufacturer | Infineon |
| Product Category ! | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOIC-8 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 11 A | Rds On - Drain-Source Resistance | 18.2 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Qg - Gate Charge | 7.2 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
| Pd - Power Dissipation | 2.5 W | Channel Mode | Enhancement |
| Brand | Infineon Technologies | Fall Time | 3.1 ns |
| Height | 1.75 mm | Length | 4.9 mm |
| Product Type ! | MOSFET | Rise Time ! | 6.2 ns |
| Factory Pack Quantity | 95 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Type | HEXFET Power MOSFET |
| Typical Turn-Off Delay Time | 10 ns | Typical Turn-On Delay Time | 6.9 ns |
| Width | 3.9 mm | Part # Aliases | SP001554410 |
| Unit Weight | 0.019048 oz |
Specification Comparison
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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