IRFB4615
IRFB4615 product descriptionIRFB4615
IRFB4615 product description
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Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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IRFB4615 DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The IRFB4615 brings a comprehensive solution to a wide range of applications, thanks to its robust construction and high-performance characteristics. With a focus on delivering low RDS(on) and handling high currents, this MOSFET is well-suited for tasks that require both power and precision. Whether it's controlling the speed of a motor or managing the flow of electricity in a converter, the IRFB4615 is a dependable choice for engineers seeking top-tier performance
Key Features
- High current capability
- Low on-resistance
- Fast switching performance
- Enhanced 150°C operating temperature capability
- Compliant to RoHS requirements
- Low profile through-hole IR dual FET package
Application
- Switching power supplies
- Motor control
- DC motor drives
- Converter circuits
- Audio amplifiers
- Motor controllers
- Electronic ballasts
- Battery charging circuits
- Pre-regulators for linear regulators
- DC-DC converters
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Package | TO-220 | Polarity | N |
RthJC max | 1.04 K/W | Tj max | 175.0 °C |
VDS max | 150.0 V | VGS max | 20.0 V |
Mounting | THT | Ptot max | 144.0 W |
RDS (on) max | 39.0 mΩ | VGS(th) max | 5.0 V |
VGS(th) min | 3.0 V | ID max | 35.0 A |
Operating Temperature max | 175.0 °C | Operating Temperature min | -55.0 °C |
Specification Comparison
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is IRFB4615?
The IRFB4615 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Infineon Technologies. It is a high-voltage, N-channel MOSFET suitable for high-power switching applications in power supplies, motor control, and automotive systems.
How Does IRFB4615 Work?
The IRFB4615 works by controlling the flow of current between the drain and source terminals using a voltage applied to the gate terminal. It operates as a high-power switch, allowing or blocking the flow of current in response to the gate voltage. The MOSFET's low on-resistance and high breakdown voltage make it suitable for high-power applications.
How Many Pins does IRFB4615 have and What are the Functions of the Pinout Configuration?
The IRFB4615 is housed in a TO-220AB package. The pinout configuration includes:
- GATE: Gate control terminal for turning the MOSFET on and off.
- DRAIN: Terminal for connecting to the load or power supply.
- SOURCE: Terminal for the return path of the current flow.
What are the Pros and Cons of IRFB4615?
Pros:
- High Voltage Rating: Suitable for high-voltage applications.
- Low On-Resistance: Minimizes power dissipation and heat generation.
- Robust Construction: Designed for reliable high-power operation.
- TO-220AB Package: Widely used and easy to mount on heat sinks.
Cons:
- Gate Drive Requirements: Requires careful attention to gate drive circuitry for proper switching performance.
- Switching Speed: May not be suitable for high-frequency switching applications due to the MOSFET's intrinsic capacitance.
Are There Any Equivalents/Alternatives to IRFB4615 for Recommendation?
Possible alternatives to the IRFB4615 include the IRF540, IRF840, and IRFB7430, which are all N-channel power MOSFETs designed for similar high-power applications.
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