IRFR3607
Power Field-Effect Transistor with specifications: 56A I(D), 75V, 0.009ohm, N-Channel, Silicon, TO-252AA, PLASTIC, DPAK-3IRFR3607
Power Field-Effect Transistor with specifications: 56A I(D), 75V, 0.009ohm, N-Channel, Silicon, TO-252AA, PLASTIC, DPAK-3
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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IRFR3607 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Key Features
- Enhanced power MOSFET
- Fast switching speeds
- High performance Schottky diode
- Low on-resistance
- Low gate charge
- High current capability
- Industry standard TO-252 package
- RoHS compliant
Application
- Power management
- Switching applications
- Motor control
- Electronic ballasts
- DC-DC converters
- Power supplies
- Motor drives
- High-speed switching circuits
- Industrial applications
- Automotive applications
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Mounting | SMD | Package | DPAK (TO-252) |
Ptot max | 140.0 W | Tj max | 175.0 °C |
VGS max | 20.0 V | Moisture Sensitivity Level | 1 |
Polarity | N | RthJC max | 1.05 K/W |
VDS max | 75.0 V | RDS (on) max | 9.0 mΩ |
VGS(th) max | 4.0 V | VGS(th) min | 2.0 V |
ID max | 80.0 A | Operating Temperature max | 175.0 °C |
Operating Temperature min | -55.0 °C |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is IRFR3607?
The IRFR3607 is a power MOSFET designed for high efficiency and high power applications. It is commonly used in power supplies, motor control, and automotive systems where high switching speeds and low conduction losses are critical.
How Does IRFR3607 Work?
The IRFR3607 works as a voltage-controlled switch, allowing or disallowing the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate terminal, the MOSFET conducts, enabling power to flow through the device. It operates with high efficiency and can handle large currents and high frequencies.
How Many Pins does IRFR3607 have and What are the Functions of the Pinout Configuration?
The IRFR3607 is housed in a TO-252 package, which typically includes three pins:
- Gate (G): The gate terminal is used to control the switching of the MOSFET.
- Drain (D): The drain terminal is where the output power is taken from.
- Source (S): The source terminal is where the current flows out of the MOSFET.
What are the Pros and Cons of IRFR3607?
Pros:
- High Efficiency: The IRFR3607 offers low conduction losses and high switching speeds, leading to high overall efficiency.
- High Current Handling: Capable of handling large currents, making it suitable for power applications.
- Compact Package: Housed in a TO-252 package, which is space-efficient and allows for easy mounting on a PCB.
Cons:
- Gate Drive Voltage: May require a relatively high gate drive voltage for full enhancement, which can affect driver circuitry design.
- Heat Dissipation: High power applications may require additional heat sinking for proper thermal management.
Are There Any Equivalents/Alternatives to IRFR3607 for Recommendation?
Alternatives to the IRFR3607 include the IRF3205 from Infineon and the FDP7030L from Fairchild Semiconductor, both of which are power MOSFETs suitable for high power applications.
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