IRFL014NPBF
Small-signal N-channel MOSFET rated for 1900mA and 55V, packaged in TO-261AA and made of siliconIRFL014NPBF
Small-signal N-channel MOSFET rated for 1900mA and 55V, packaged in TO-261AA and made of silicon
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Manufacturer Part # : IRFL014NPBF
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Package/Case: SOT223-4
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Part Status : Obsolete
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Brand: Infineon Technologies
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Product Categories : Single FETs, MOSFETs
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Service & Packaging
Service & Packaging
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IRFL014NPBF DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
1 | $0.210 | $0.21 |
200 | $0.082 | $16.40 |
500 | $0.079 | $39.50 |
1000 | $0.077 | $77.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
The IRFL014NPBF is a single N-Channel FET from International Rectifier/Infineon Discrete Semiconductor Products. It is made using Si technology and is packaged in a SOT-223-4 package. It has a turn-on delay time of 6.6 ns, a drain-source resistance of 160 mOhms, a breakdown voltage of 55 V, and a power dissipation of 2.1 W. It is designed to operate in temperatures ranging from -55 C to +150 C.Features:- Si technology- Turn-on delay time of 6.6 ns- Drain-source resistance of 160 mOhms- Breakdown voltage of 55 V- Power dissipation of 2.1 W- N-Channel- Operating temperature range of -55 C to +150 CApplications:The IRFL014NPBF is suitable for use in a variety of applications, including power management, motor control, and audio/video systems. It can also be used in automotive, industrial, and consumer electronics.
Key Features
- - Si technology
- - Turn-on delay time of 6.6 ns
- - Drain-source resistance of 160 mOhms
- - Breakdown voltage of 55 V
- - Power dissipation of 2.1 W
- - N-Channel
- - Operating temperature range of -55 C to +150 C
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-223-4 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 55 V |
Id - Continuous Drain Current | 1.9 A | Rds On - Drain-Source Resistance | 160 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Qg - Gate Charge | 7 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
Pd - Power Dissipation | 2.1 W | Channel Mode | Enhancement |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 3.3 ns | Height | 1.6 mm |
Length | 6.5 mm | Product Type ! | MOSFET |
Rise Time ! | 7.1 ns | Factory Pack Quantity | 1760 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | HEXFET Power MOSFET | Typical Turn-Off Delay Time | 12 ns |
Typical Turn-On Delay Time | 6.6 ns | Width | 3.5 mm |
Part # Aliases | SP001570856 | Unit Weight | 0.003951 oz |
Specification Comparison
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is IRFL014NPBF?
The IRFL014NPBF is a power MOSFET transistor designed by Infineon Technologies. It is a N-channel MOSFET suitable for various high-power switching applications such as power supplies, motor control, and load switching.
How Does IRFL014NPBF Work?
The IRFL014NPBF works by utilizing the electric field effect in a semiconductor structure to control the conductivity of the channel. When a voltage is applied to the gate terminal, it creates an electric field that modulates the conductivity between the source and drain terminals, allowing for high-power switching with minimal power loss.
How Many Pins does IRFL014NPBF have and What are the Functions of the Pinout Configuration?
The IRFL014NPBF is housed in a TO-262 package. The pinout configuration includes:
- G (Gate): Controls the conductivity of the channel.
- D (Drain): Connects to the positive supply voltage for current flow.
- S (Source): Connects to the load or ground, depending on the application.
What are the Pros and Cons of IRFL014NPBF?
Pros:
- High Current Capability: Capable of handling high currents for power applications.
- Low On-Resistance: Minimizes power loss and heat dissipation during switching.
- Fast Switching Speed: Allows for efficient power control and high-frequency switching.
- High Power Dissipation Capability: Suitable for high-power applications.
Cons:
- Gate Drive Voltage: Requires precise gate drive voltage for optimal performance.
- Gate Capacitance: May require additional circuitry to manage gate capacitance for certain applications.
Are There Any Equivalents/Alternatives to IRFL014NPBF for Recommendation?
Equivalents to the IRFL014NPBF include the AUIRF3205 from Infineon Technologies and the FDP8878 from Fairchild Semiconductor.
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