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IRFL110
Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN
IRFL110
Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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Tube or Tray
IRFL110 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.FEATURES• Surface mount• Available in tape and reel• Dynamic dV/dt rating• Repetitive avalanche rated• Fast switching• Ease of paralleling• Simple drive requirements• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Key Features
- High-frequency operation
- Low input current
- Surge immunity
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | No | Rohs Code | No |
| Part Life Cycle Code | Obsolete | Part Package Code | SOT-223 |
| Pin Count ! | 4 | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | Additional Feature ! | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 150 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (ID) | 1.5 A | Drain-source On Resistance-Max | 0.54 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 15 pF |
| JEDEC-95 Code | TO-261AA | JESD-30 Code | R-PSSO-G3 |
| JESD-609 Code | e0 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode ! | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 3.1 W | Pulsed Drain Current-Max (IDM) | 12 A |
| Qualification Status ! | Not Qualified | Reference Standard | IEC-61249-2-21 |
| Surface Mount ! | YES | Terminal Finish | TIN LEAD |
| Terminal Form ! | GULL WING | Terminal Position | SINGLE |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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