IRFS3206PBF
IRFS3206PBF is a MOSFET with a voltage rating of 60V, N-CH channel, low on-resistance of 3mOhms, and a total gate charge of 120nCIRFS3206PBF
IRFS3206PBF is a MOSFET with a voltage rating of 60V, N-CH channel, low on-resistance of 3mOhms, and a total gate charge of 120nC
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Manufacturer Part # : IRFS3206PBF
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Package/Case: D2PAK-3
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Brand: Infineon Technologies
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Product Categories : Single FETs, MOSFETs
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IRFS3206PBF DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The IRFS3206PBF is a high-power N-channel MOSFET designed for use in a wide range of applications requiring high efficiency and low on-state resistance. Its maximum voltage rating is 60V, with a continuous drain current of 120A when the case temperature is kept at or below 25°C. The device is capable of dissipating up to 300W of power when properly mounted and cooled. This MOSFET comes in a Surface Mount D2PAK package, which is a popular choice for through-hole mounting due to its low profile and high current capacity. The package is designed to handle high temperatures and provide good thermal performance to ensure the MOSFET operates within safe limits. The IRFS3206PBF features a low gate charge and low on-state resistance, making it suitable for high-speed switching applications where minimizing switching losses is critical. Its high current handling capability also makes it ideal for power supply, motor control, and other high-power electronic circuits.
Key Features
- Fast switching
- Low on-resistance
- Advanced process technology
- Low thermal resistance
- High input impedance
- Logic-level gate drive
Application
- Switching power supplies
- DC-AC inverters
- Motor drives
- Voltage regulators
- LED lighting applications
- Solar grid-tie inverters
- Battery chargers
- Industrial applications
- Automotive systems
- Telecommunication equipment
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | D2PAK-3 (TO-263-3) | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 210 A | Rds On - Drain-Source Resistance | 2.4 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Qg - Gate Charge | 120 nC |
Pd - Power Dissipation | 300 W | Brand | Infineon Technologies |
Configuration | Single | Height | 4.4 mm |
Length | 10 mm | Product Type ! | MOSFET |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Width | 9.25 mm |
Part # Aliases | SP001557264 | Unit Weight | 0.139332 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is IRFS3206PBF?
The IRFS3206PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Infineon Technologies. It is part of the HEXFET series and is ideal for high-current, high-frequency switching applications, such as power supplies, motor control, and automotive systems.
How Does IRFS3206PBF Work?
The IRFS3206PBF works by controlling the flow of electrical current through a conductive channel by varying the voltage applied to the gate terminal. This allows it to act as a switch for high-power applications, enabling efficient and fast switching operation. The MOSFET's low on-state resistance minimizes power losses and improves system efficiency.
How Many Pins does IRFS3206PBF have and What are the Functions of the Pinout Configuration?
The IRFS3206PBF is housed in a TO-220AB package. The pinout configuration includes:
- GATE: Gate terminal for controlling the MOSFET's conductivity.
- DRAIN: Drain terminal for the main current flow.
- SOURCE: Source terminal for the return path of the current.
What are the Pros and Cons of IRFS3206PBF?
Pros:
- High Power Capability: Capable of handling high currents and voltages for power applications.
- Fast Switching Speed: Enables rapid on/off switching transitions for efficient power control.
- Low On-Resistance: Reduces power dissipation and improves energy efficiency.
- Robustness: Designed to withstand high surge currents and thermal stress.
Cons:
- Drive Voltage: May require higher drive voltages compared to other types of transistors.
- Gate Capacitance: The MOSFET's gate capacitance can impact switching speed and drive requirements.
Are There Any Equivalents/Alternatives to IRFS3206PBF for Recommendation?
- The IRF3205 from Infineon is a similar power MOSFET with comparable specifications.
- Alternatives to the IRFS3206PBF include the FDP8870 from Fairchild Semiconductor and the IPP60R190C6 from Infineon.
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