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IRFU9120NPBF
High-voltage P-Channel MOSFET designed for applications requiring low on-resistance (480mOhm) and fast switching characteristics (18nC gate charge)
IRFU9120NPBF
High-voltage P-Channel MOSFET designed for applications requiring low on-resistance (480mOhm) and fast switching characteristics (18nC gate charge)
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Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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Maintain the goods in their original condition as received.
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About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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IRFU9120NPBF DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The IRFU9120NPBF is a versatile Power FET that excels in handling power distribution and control tasks. Boasting a current rating of 6.6A and a voltage rating of 100V, this P-Channel FET is ideal for applications requiring high power efficiency. The TO-251AA package offers a compact and durable housing for the FET, making it easy to integrate into existing circuitry. With its lead-free and plastic construction, the IRFU9120NPBF is a sustainable choice for environmentally conscious projects seeking reliable power management solutions
Key Features
- 100V single N-channel HEXFET power MOSFET
- Low on-state resistance
- Fast switching performance
- Avalanche energy specified
- Advanced process technology
- Low thermal resistance
- RoHS compliant
- Logic level gate drive
- Low profile D2Pak package
- Suitable for high efficiency and high frequency applications
Application
- Industrial motor control
- Servo drives
- Welding
- Industrial drives
- Uninterruptible Power Supplies (UPS)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Obsolete |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Additional Feature ! | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | Avalanche Energy Rating (Eas) | 100 mJ |
| Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100 V | Drain Current-Max (Abs) (ID) | 6.5 A |
| Drain Current-Max (ID) | 6.6 A | Drain-source On Resistance-Max | 0.48 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-251AA |
| JESD-30 Code | R-PSIP-T3 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode ! | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | IN-LINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 39 W | Pulsed Drain Current-Max (IDM) | 26 A |
| Qualification Status ! | Not Qualified | Surface Mount ! | NO |
| Terminal Finish | MATTE TIN OVER NICKEL | Terminal Form ! | THROUGH-HOLE |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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