IRFUC20
2A I(D) Power Field-Effect Transistor with 600V, 4.4ohm, N-Channel Silicon Metal-oxide Semiconductor FET, TO-251, IPAK-3IRFUC20
2A I(D) Power Field-Effect Transistor with 600V, 4.4ohm, N-Channel Silicon Metal-oxide Semiconductor FET, TO-251, IPAK-3
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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IRFUC20 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The IRFUC20 is a N-Channel MOSFET transistor designed for high voltage and high power applications. It has a maximum voltage rating of 600V and a continuous drain current of 2A at a case temperature of 25 degrees Celsius. The power dissipation for this component is 2.5W at an ambient temperature of 25 degrees Celsius, and 42W at a case temperature of 25 degrees Celsius. This MOSFET transistor comes in a TO-251AA package, which is a through-hole package that allows for easy mounting on a circuit board. The through-hole design also helps with heat dissipation, making it suitable for applications where thermal management is essential. The IRFUC20 is commonly used in power supply circuits, motor control applications, and other high power switching applications. Its low on-resistance and high switching speed make it an efficient choice for these types of applications.
Key Features
- Compact surface-mount package
- Straight lead option available
- Rapid response time guaranteed
- Silicon-based for high reliability
Application
- Gas detection systems
- Temperature control
- Fluid handling equipment
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | N |
Technology | Si | Mounting Style | Through Hole |
Package / Case | TO-251-3 | Series | IRFR/UC |
Brand | Vishay / Siliconix | Height | 6.22 mm |
Length | 6.73 mm | Product Type ! | MOSFET |
Factory Pack Quantity | 75 | Subcategory | MOSFETs |
Width | 2.39 mm | Unit Weight | 0.011993 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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