IRG4BC30WPBF
100W IGBTs with TO-220AB PackageIRG4BC30WPBF
100W IGBTs with TO-220AB Package
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Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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IRG4BC30WPBF DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
1 | $5.245 | $5.24 |
10 | $4.580 | $45.80 |
50 | $4.186 | $209.30 |
100 | $3.787 | $378.70 |
500 | $3.603 | $1,801.50 |
1000 | $3.520 | $3,520.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
Features •Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications •Industry-benchmark switching losses improve efficiency of all power supply topologies •50% reduction of Eoff parameter •Low IGBT conduction losses •Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
Key Features
- Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
- Industry-benchmark switching losses improve efficiency of all power supply topologies
- 50% reduction of Eoff parameter
- Low IGBT conduction losses
- Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-220-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 2.7 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 23 A |
Pd - Power Dissipation | 100 W | Minimum Operating Temperature | - 55 C |
Brand | Infineon Technologies | Height | 8.77 mm |
Length | 10.54 mm | Product Type ! | IGBT Transistors |
Factory Pack Quantity | 1000 | Subcategory | IGBTs |
Width | 4.69 mm | Unit Weight | 0.211644 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is IRG4BC30WPBF?
The IRG4BC30WPBF is a high speed, high voltage insulated gate bipolar transistor (IGBT) designed by Infineon Technologies. It is designed for applications requiring high power switching, such as motor control, renewable energy systems, and inverters.
How Does IRG4BC30WPBF Work?
The IRG4BC30WPBF operates by controlling high voltage and high current with the use of insulated gate bipolar transistor technology. It is capable of fast switching and is designed to handle high power loads efficiently. The IGBT is suitable for demanding industrial and power applications where high performance is required.
How Many Pins does IRG4BC30WPBF have and What are the Functions of the Pinout Configuration?
The IRG4BC30WPBF is housed in a TO-220AB package with 3 pins. The pinout configuration includes:
- Collector (C): This is the terminal for the high voltage collector of the IGBT.
- Gate (G): The gate terminal controls the switching of the IGBT.
- Emitter (E): This terminal is for the low voltage emitter of the IGBT.
What are the Pros and Cons of IRG4BC30WPBF?
Pros:
- High Voltage Capability: Suitable for high voltage applications.
- High Speed Switching: Capable of fast switching for efficient power control.
- Reliable Performance: Designed for high power handling and industrial applications.
Cons:
- Gate Drive Requirement: Requires a precise and high-speed gate drive circuit for optimal performance.
- Heat Dissipation: May require efficient heat sink and thermal management for high power applications.
- Complexity: IGBTs are generally more complex than regular MOSFETs and may need additional circuitry for protection and control.
Are There Any Equivalents/Alternatives to IRG4BC30WPBF for Recommendation?
Equivalents to the IRG4BC30WPBF include the FGA25N120ANTD from Fairchild Semiconductor and the IXGH40N60C2D1 from IXYS Corporation. Alternatives to consider are the IHW40N135R5 from Infineon Technologies and the FGH40N60SMD from ON Semiconductor.
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