IRG4PC40UDPBF
IGBT Transistors for high-frequency applicationsIRG4PC40UDPBF
IGBT Transistors for high-frequency applications
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Manufacturer Part # : IRG4PC40UDPBF
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Package/Case: TO247-3
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Part Status : Obsolete
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Brand: Infineon Technologies
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Product Categories : Single IGBTs
Quality Assurance
Quality Assurance
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
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About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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IRG4PC40UDPBF DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
Features• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching,>200 kHz in resonant mode• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3• IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations• Industry standard TO-247AC package• Lead-FreeBenefits• Generation -4 IGBTs offer highest efficiencies available• IGBTs optimized for specific application conditions• HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
Key Features
- UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching,>200 kHz in resonant mode
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
- IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
- Industry standard TO-247AC package
- Lead-Free
- Benefits
- Generation -4 IGBTs offer highest efficiencies available
- IGBTs optimized for specific application conditions
- HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing
- Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
Application
- Power Management
- Alternative Energy
- Industrial
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-247-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 2.15 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 40 A |
Pd - Power Dissipation | 160 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Brand | Infineon Technologies |
Continuous Collector Current Ic Max | 20 A | Gate-Emitter Leakage Current | 100 nA |
Height | 20.7 mm (Max) | Length | 15.87 mm (Max) |
Product Type ! | IGBT Transistors | Factory Pack Quantity | 400 |
Subcategory | IGBTs | Width | 5.31 mm (Max) |
Unit Weight | 1.340411 oz |
Specification Comparison
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is IRG4PC40UDPBF?
The IRG4PC40UDPBF is a high voltage, high speed insulated gate bipolar transistor (IGBT) designed by Infineon Technologies. It is ideal for applications requiring high power switching, such as motor control, power supplies, and industrial inverters.
How Does IRG4PC40UDPBF Work?
The IRG4PC40UDPBF operates as a high voltage, high speed switch for controlling large currents. It utilizes the IGBT technology to combine the advantages of MOSFET and bipolar transistors, offering high input impedance and low on-state voltage drop. This allows for efficient and precise control of high power circuits.
How Many Pins does IRG4PC40UDPBF have and What are the Functions of the Pinout Configuration?
The IRG4PC40UDPBF is housed in a TO-247AC package. The pinout configuration includes:
- GATE: Gate control input for switching the IGBT.
- C: Collector terminal for high voltage connection.
- E: Emitter terminal for output connection.
What are the Pros and Cons of IRG4PC40UDPBF?
Pros:
- High Voltage Capability: Suitable for high voltage applications such as motor drives and power converters.
- High Speed Switching: Offers fast switching characteristics for efficient power control.
- Low Saturation Voltage: Reduces conduction losses for improved efficiency.
- Robust Construction: Designed to withstand high currents and voltages in demanding environments.
Cons:
- Complex Drive Circuitry: May require sophisticated gate driving circuitry for optimal performance.
- Size and Weight: TO-247AC package may be relatively larger and heavier compared to other packages.
- Heat Dissipation: High power switching may require effective thermal management for continuous operation.
Are There Any Equivalents/Alternatives to IRG4PC40UDPBF for Recommendation?
- The IRG4PC40W from Infineon Technologies is a similar IGBT with slightly different electrical characteristics.
- Alternatives to the IRG4PC40UDPBF include the FGA25N120ANTD from Fairchild Semiconductor and the NGTB40N120FL3WG from ON Semiconductor.
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