IRG4PH50SPBF
1200V 57A 200W 3-Pin(3+Tab)IRG4PH50SPBF
1200V 57A 200W 3-Pin(3+Tab)
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Manufacturer Part # : IRG4PH50SPBF
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Package/Case: TO247-3
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Brand: Infineon Technologies
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Product Categories : Single IGBTs
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
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IRG4PH50SPBF DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
INSULATED GATE BIPOLAR TRANSISTOR
Key Features
- Standard: Optimized for minimum saturation
- voltage and low operating frequency (<1kHz)
- Generation 4 IGBT design provides tighter
- parameter distribution and higher efficiency than
- Generation 3
- Industry standard TO-247AC package
- Lead-Free
Application
- Power Management
- Motor Drive & Control
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-247-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 1.75 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 57 A |
Pd - Power Dissipation | 200 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Brand | Infineon Technologies |
Continuous Collector Current Ic Max | 33 A | Gate-Emitter Leakage Current | 100 nA |
Height | 20.7 mm (Max) | Length | 15.87 mm (Max) |
Product Type ! | IGBT Transistors | Factory Pack Quantity | 400 |
Subcategory | IGBTs | Width | 5.31 mm (Max) |
Unit Weight | 1.340411 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is IRG4PH50SPBF?
The IRG4PH50SPBF is a high performance IGBT (Insulated Gate Bipolar Transistor) designed by Infineon Technologies. It is suitable for various high power applications such as motor control, power supplies, and renewable energy systems.
How Does IRG4PH50SPBF Work?
The IRG4PH50SPBF operates as a high voltage, high speed switch, allowing it to control large amounts of power efficiently. Its insulated gate design provides excellent switching performance and allows for high current and voltage ratings, making it suitable for demanding applications.
How Many Pins does IRG4PH50SPBF have and What are the Functions of the Pinout Configuration?
The IRG4PH50SPBF is housed in a TO-247AC package. The pinout configuration includes:
- GATE: Gate control pin.
- C Collector: Collector pin.
- E Emitter: Emitter pin.
- VCE: Voltage collector-emitter pin.
- VGE: Voltage gate-emitter pin.
What are the Pros and Cons of IRG4PH50SPBF?
Pros:
- High Power Handling: Capable of handling high voltage and current levels.
- High Speed Switching: Provides fast switch-on and switch-off times for efficient power control.
- Robust Design: Able to withstand high power and temperature levels, suitable for rugged environments.
Cons:
- Gate Drive Complexity: Requires careful consideration of gate drive circuitry for optimal switching performance.
- Size: The TO-247AC package may be larger than other package options, requiring more board space.
Are There Any Equivalents/Alternatives to IRG4PH50SPBF for Recommendation?
- The IRGP4063D from Infineon Technologies is a similar high performance IGBT option.
- Alternatives to the IRG4PH50SPBF include the FGA25N120ANTD from Fairchild Semiconductor and the NGTB40N120FL3WG from ON Semiconductor.
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