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IRLU9343
IPAK-3 packaged P-channel MOSFET, 20A current handling, 55V voltage tolerance
IRLU9343
IPAK-3 packaged P-channel MOSFET, 20A current handling, 55V voltage tolerance
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Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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IRLU9343 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
VDS -55 VRDS(ON) typ. @ VGS = -10V 93 mΩRDS(ON) typ. @ VGS = -4.5V 150 mΩQg typ. 31 nCTJ max 175 °CDescriptionThis Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.Features● Advanced Process Technology● Key Parameters Optimized for Class-D Audio Amplifier Applications● Low RDSON for Improved Efficiency● Low Qg and Qsw for Better THD and Improved Efficiency● Low Qrr for Better THD and Lower EMI● 175°C Operating Junction Temperature for Ruggedness● Repetitive Avalanche Capability for Robustness and Reliability● Multiple Package Options
Key Features
- Advanced Process Technology
- Key Parameters Optimized for Class-D Audio Amplifier Applications
- Low RDSON for Improved Efficiency
- Low Qg and Qsw for Better THD and Improved Efficiency
- Low Qrr for Better THD and Lower EMI
- 175°C Operating Junction Temperature for Ruggedness
- Repetitive Avalanche Capability for Robustness and Reliability
- Multiple Package Options
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | No | Part Life Cycle Code | Obsolete |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Avalanche Energy Rating (Eas) | 120 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 55 V |
| Drain Current-Max (ID) | 20 A | Drain-source On Resistance-Max | 0.105 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-251AA |
| JESD-30 Code | R-PSIP-T3 | JESD-609 Code | e0 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode ! | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | IN-LINE |
| Polarity/Channel Type | P-CHANNEL | Pulsed Drain Current-Max (IDM) | 60 A |
| Qualification Status ! | Not Qualified | Surface Mount ! | NO |
| Terminal Finish | TIN LEAD | Terminal Form ! | THROUGH-HOLE |
| Terminal Position | SINGLE | Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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