IXFK55N50
Product IXFK55N50 is a power field-effect transistor with a current rating of 55A, a voltage rating of 500V, and a resistance of 0IXFK55N50
Product IXFK55N50 is a power field-effect transistor with a current rating of 55A, a voltage rating of 500V, and a resistance of 0
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Manufacturer Part # : IXFK55N50
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Package/Case: TO264-3
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Product Categories : Single FETs, MOSFETs
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Service & Packaging
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IXFK55N50 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The IXFK55N50 is a standout product in the N-Channel HiPerFET™ Standard series, known for its versatility in various applications. With low gate charge and exceptional ruggedness, this Power MOSFET is a popular choice for both hard switching and resonant mode operations. Additionally, its fast intrinsic diode further enhances its performance, making it a reliable option for industrial uses. The availability of this series in different standard packages, including isolated types, adds to its appeal among customers looking for high-quality components for their projects
Key Features
- Self-Recovery Function
- Reduced EMI
- Robust Performance
- Minimized Switching Losses
Application
- Robust design
- Cost-effective solution
- Wide voltage range
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Drain-Source Voltage (V) | 500 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.1 |
Continuous Drain Current @ 25 ℃ (A) | 50 | Gate Charge (nC) | 330 |
Input Capacitance, CISS (pF) | 9400 | Thermal resistance [junction-case] (K/W) | 0.22 |
Configuration | Single | Package Type | TO-264 |
Power Dissipation (W) | 568 | Maximum Reverse Recovery (ns) | 250 |
Sample Request | No |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is IXFK55N50?
The IXFK55N50 is a 500V, 75A, high voltage MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by IXYS Corporation. It is ideal for applications requiring high voltage switching, such as power supplies, motor drives, and inverters.
How Does IXFK55N50 Work?
The IXFK55N50 operates as a high voltage switch, controlling the flow of current in power electronics applications. It utilizes a metal-oxide-semiconductor structure to modulate the flow of charge carriers within the device, allowing for efficient and high-speed switching operations.
How Many Pins does IXFK55N50 have and What are the Functions of the Pinout Configuration?
The IXFK55N50 is housed in a TO-264 package. The pinout configuration includes:
- G (Gate): Control pin for turning the MOSFET on and off.
- D (Drain): High voltage output pin.
- S (Source): Low voltage input pin.
- B (Base): Connection for the substrate/body of the MOSFET.
What are the Pros and Cons of IXFK55N50?
Pros:
- High Voltage Rating: Capable of handling high voltage applications.
- High Current Capability: Supports high current operation, suitable for power electronics.
- Fast Switching Speed: Enables rapid on/off switching for efficient power control.
- Low ON-State Resistance: Minimizes power losses during conduction.
- Robust Construction: Designed for reliable operation in demanding environments.
Cons:
- Gate Drive Considerations: Requires attention to gate drive voltage and current for proper switching performance.
- Heat Dissipation: High current operation may require careful thermal management to prevent overheating.
- Protection Circuitry: May require additional protection circuitry to safeguard against voltage and current spikes.
Are There Any Equivalents/Alternatives to IXFK55N50 for Recommendation?
- The IRFP4568PbF from Infineon is a similar high-voltage MOSFET with comparable specifications.
- Alternatives to the IXFK55N50 include the STW75N06 from STMicroelectronics and the FQP65N06 from Fairchild Semiconductor.
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