K4D263238F-QC50

Name: K4D263238F-QC50
Rating: 4.5 (10 reviews)

Fast data transfer DDR DRAM module for high-performance application

3,194 Effective Inventory

K4D263238F-QC50

Effective Inventory3,194

Fast data transfer DDR DRAM module for high-performance application

Manufacturer Part # : K4D263238F-QC50
Package/Case: TQFP-100
Brand: SAMSUNG

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All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

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About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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K4D263238F-QC50 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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Details

GENERAL DESCRIPTIONFOR 1M x 32Bit x 4 Bank DDR SDRAMThe K4D263238F is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 2.0GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.FEATURES• 2.5V ± 5% power supply for device operation• 2.5V ± 5% power supply for I/O interface• SSTL_2 compatible inputs/outputs• 4 banks operation• MRS cycle with address key programs -. Read latency 3 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (sequential & interleave)• Full page burst length for sequential burst type only• Start address of the full page burst should be even• All inputs except data & DM are sampled at the positive going edge of the system clock• Differential clock input• No Write Interrupted by Read function• Data I/O transactions on both edges of Data strobe• DLL aligns DQ and DQS transitions with Clock transition• Edge aligned data & data strobe output• Center aligned data & data strobe input• DM for write masking only• Auto & Self refresh• 32ms refresh period (4K cycle)• 100pin TQFP package• Maximum clock frequency up to 250MHz• Maximum data rate up to 500Mbps/pin

Key Features

2.5V ± 5% power supply for device operation
2.5V ± 5% power supply for I/O interface
SSTL_2 compatible inputs/outputs
4 banks operation
MRS cycle with address key programs
-. Read latency 3 (clock)
-. Burst length (2, 4, 8 and Full page)
-. Burst type (sequential & interleave)
Full page burst length for sequential burst type only
Start address of the full page burst should be even
All inputs except data & DM are sampled at the positive going edge of the system clock
Differential clock input
No Write Interrupted by Read function
Data I/O transactions on both edges of Data strobe
DLL aligns DQ and DQS transitions with Clock transition
Edge aligned data & data strobe output
Center aligned data & data strobe input
DM for write masking only
Auto & Self refresh
32ms refresh period (4K cycle)
100pin TQFP package
Maximum clock frequency up to 250MHz
Maximum data rate up to 500Mbps/pin

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code	No	Part Life Cycle Code	Obsolete
Part Package Code	QFP	Pin Count !	100
Reach Compliance Code		ECCN Code	EAR99
HTS Code !	8542.32.00.02	Access Mode !	FOUR BANK PAGE BURST
Access Time-Max	0.7 ns	Additional Feature !	AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)	200 MHz	I/O Type	COMMON
Interleaved Burst Length	2,4,8	JESD-30 Code	R-PQFP-G100
JESD-609 Code	e0	Length	20 mm
Memory Density	134217728 bit	Memory IC Type	DDR1 DRAM
Memory Width	32	Number of Functions	1
Number of Ports !	1	Number of Terminals	100
Number of Words	4194304 words	Number of Words Code	4000000
Operating Mode !	SYNCHRONOUS	Operating Temperature-Max	65 °C
Operating Temperature-Min		Organization	4MX32
Output Characteristics	3-STATE	Package Body Material	PLASTIC/EPOXY
Package Code	TQFP	Package Equivalence Code	TQFP100,.7X.9,25
Package Shape	RECTANGULAR	Package Style	FLATPACK, THIN PROFILE
Power Supplies !	2.5 V	Qualification Status !	Not Qualified
Refresh Cycles	4096	Seated Height-Max	1.2 mm
Self Refresh	YES	Sequential Burst Length	2,4,8,FP
Supply Voltage-Max (Vsup)	2.625 V	Supply Voltage-Min (Vsup)	2.375 V
Supply Voltage-Nom (Vsup)	2.5 V	Surface Mount !	YES
Technology	CMOS	Temperature Grade !	COMMERCIAL
Terminal Finish	TIN LEAD	Terminal Form !	GULL WING
Terminal Pitch !	0.65 mm	Terminal Position	QUAD
Width	14 mm

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification K4D263238F-QC50 PDF Download

FAQs

What is K4D263238F-QC50?

The K4D263238F-QC50 is a high-speed CMOS dynamic random-access memory (DRAM) module designed by Samsung. It offers fast and reliable data storage and retrieval capabilities, making it suitable for high-performance computing, servers, and networking applications.

How Does K4D263238F-QC50 Work?

The K4D263238F-QC50 works by storing and accessing data in a dynamic random-access fashion. It utilizes a matrix of capacitors to store charge representing binary data, which needs to be periodically refreshed to maintain data integrity. The module supports high-speed data transfer rates for efficient operation in demanding applications.

How Many Pins does K4D263238F-QC50 have and What are the Functions of the Pinout Configuration?

The K4D263238F-QC50 is typically found in a standard DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) form factor with 184 pins. The pinout configuration includes:

Data Pins: For bi-directional data transfer between the module and the memory controller.
Address Pins: For specifying the memory location to read from or write to.
Control Pins: For managing data transfer operations and timing signals.
Power and Ground Pins: For supplying power and ensuring proper grounding.
Clock Pin: For synchronizing data transfers within the module.

What are the Pros and Cons of K4D263238F-QC50?

Pros:

High Speed: Offers fast data transfer rates for rapid access to stored information.
Reliability: Provides stable and reliable performance under demanding conditions.
High Capacity: Offers significant memory storage capacity for processing large datasets.
Compatibility: Designed to be compatible with standard DDR SDRAM interfaces.
Efficiency: Supports efficient data transfer and processing for enhanced system performance.

Cons:

Power Consumption: High-speed DRAM modules like the K4D263238F-QC50 may consume more power under heavy loads.
Cost: Higher speed and capacity often come at a higher cost compared to lower-end memory modules.
Complexity: Requires careful configuration and management to ensure optimal performance in the system.

Are There Any Equivalents/Alternatives to K4D263238F-QC50 for Recommendation?

The MT47H64M16HR-25E:H from Micron Technology is a comparable high-speed DDR SDRAM module.
Alternative options to the K4D263238F-QC50 include the H5TC4G63AFR-PBA from SK Hynix and the M471A2K43CB1-CRC from Samsung.

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