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K4D261638K-LC40
8MX16 GDDR1 DRAM module featuring a latency of 0.6ns, built on CMOS architecture, and encased in a PDSO66 package
K4D261638K-LC40
8MX16 GDDR1 DRAM module featuring a latency of 0.6ns, built on CMOS architecture, and encased in a PDSO66 package
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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K4D261638K-LC40 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
GENERAL DESCRIPTIONFOR 1M x 32Bit x 4 Bank DDR SDRAMThe K4D263238D is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 2.0GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.FEATURES• 2.5V ± 5% power supply• SSTL_2 compatible inputs/outputs• 4 banks operation• MRS cycle with address key programs -. Read latency 3,4 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (sequential & interleave)• Full page burst length for sequential burst type only• Start address of the full page burst should be even• All inputs except data & DM are sampled at the positive going edge of the system clock• Differential clock input• No Write Interrupted by Read function• Data I/O transactions on both edges of Data strobe• DLL aligns DQ and DQS transitions with Clock transition• Edge aligned data & data strobe output• Center aligned data & data strobe input• DM for write masking only• Auto & Self refresh• 32ms refresh period (4K cycle)• 100pin TQFP package• Maximum clock frequency up to 250MHz• Maximum data rate up to 500Mbps/pin
Key Features
- 2.5V ± 5% power supply
- SSTL_2 compatible inputs/outputs
- 4 banks operation
- MRS cycle with address key programs
- -. Read latency 3,4 (clock)
- -. Burst length (2, 4, 8 and Full page)
- -. Burst type (sequential & interleave)
- Full page burst length for sequential burst type only
- Start address of the full page burst should be even
- All inputs except data & DM are sampled at the positive going edge of the system clock
- Differential clock input
- No Write Interrupted by Read function
- Data I/O transactions on both edges of Data strobe
- DLL aligns DQ and DQS transitions with Clock transition
- Edge aligned data & data strobe output
- Center aligned data & data strobe input
- DM for write masking only
- Auto & Self refresh
- 32ms refresh period (4K cycle)
- 100pin TQFP package
- Maximum clock frequency up to 250MHz
- Maximum data rate up to 500Mbps/pin
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Obsolete |
| Reach Compliance Code | ECCN Code | EAR99 | |
| HTS Code ! | 8542.32.00.02 | Access Mode ! | FOUR BANK PAGE BURST |
| Access Time-Max | 0.6 ns | Additional Feature ! | AUTO/SELF REFRESH |
| Clock Frequency-Max (fCLK) | 250 MHz | I/O Type | COMMON |
| Interleaved Burst Length | 2,4,8 | JESD-30 Code | R-PDSO-G66 |
| Length | 22.22 mm | Memory Density | 134217728 bit |
| Memory IC Type | GDDR1 DRAM | Memory Width | 16 |
| Moisture Sensitivity Level | 3 | Number of Functions | 1 |
| Number of Ports ! | 1 | Number of Terminals | 66 |
| Number of Words | 8388608 words | Number of Words Code | 8000000 |
| Operating Mode ! | SYNCHRONOUS | Operating Temperature-Max | 65 °C |
| Operating Temperature-Min | Organization | 8MX16 | |
| Output Characteristics | 3-STATE | Package Body Material | PLASTIC/EPOXY |
| Package Code | TSOP2 | Package Equivalence Code | TSSOP66,.46 |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE, THIN PROFILE |
| Peak Reflow Temperature (Cel) | 260 | Power Supplies ! | 2.5 V |
| Qualification Status ! | Not Qualified | Refresh Cycles | 4096 |
| Seated Height-Max | 1.2 mm | Self Refresh | YES |
| Sequential Burst Length | 2,4,8 | Standby Current-Max | 0.045 A |
| Supply Current-Max | 0.35 mA | Supply Voltage-Max (Vsup) | 2.625 V |
| Supply Voltage-Min (Vsup) | 2.375 V | Supply Voltage-Nom (Vsup) | 2.5 V |
| Surface Mount ! | YES | Technology | CMOS |
| Temperature Grade ! | COMMERCIAL | Terminal Form ! | GULL WING |
| Terminal Pitch ! | 0.65 mm | Terminal Position | DUAL |
| Width | 10.16 mm |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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