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TSOP-66 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| MT46V32M16P-6T | 7ns access time | Micron Technology Inc | 3~7 Days | 4,241 | ||
| MT46V32M16P-6T:F | High-Performance 2.5V DRAM | Micron Technology | 3~7 Days | 4,732 | ||
| K4H510838F-LCCC | High-speed CMOS technology | SAMSUNG | 3~7 Days | 3,054 | ||
| IS43R16160B-5TL | The IS43R16160B-5TL's low power consumption and fast data transfer rate make it an excellent choice for devices with limited battery life | ISSI | 3~7 Days | 5,894 | ||
| K4H511638J-LCCC | French Electronic Distributor since 1988 | SAMSUNG | 3~7 Days | 5,752 | ||
| K4H511638C-UCB3 | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, | SAMSUNG | 3~7 Days | 7,398 | ||
| MT46V64M8P-6TIT | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | MICRON | 3~7 Days | 3,969 | ||
| MT46V16M16P-5B:M | DDR1-MT46*- MICRON PART | Micron | 3~7 Days | 4,051 | ||
| K4H511638D-UCB3 | K4H511638D-UCB3 offers efficient memory processing capabilities | Samsung Semiconductor | 3~7 Days | 3,153 | ||
| MT46V32M16P-5B IT:J | Plastic Dual Small Outline package with 66 pins | Micron Technology | ACTIVE | 3~7 Days | 5,696 | |
| W9412G6KH-5 | TSOP-66-10.2mm DDR SDRAM with environmental-friendly ROHS certification | WINBOND | Active | 3~7 Days | 3,283 | |
| W9464G6JH-5 | Fast data transfer and processing capabilities with this SDRAM (68 chars) | WINBOND | 3~7 Days | 7,438 | ||
| MT46V64M8P-5B:F | Double Data Rate Dynamic Random Access Memory with a capacity of 64 Megabits and organized as 8M x 8 configuration, featuring a fast access time of 0 | Micron Technology | OBSOLETE | 3~7 Days | 9,682 | |
| MT46V32M16P-6T IT:F | CMOS technology | Micron Technology | OBSOLETE | 3~7 Days | 4,402 | |
| IS43R16160B-6TL | TSOP2-66 Lead Free DDR DRAM CMOS PDSO66 0.400 INCH 16MX16 0.7ns | ISSI | 3~7 Days | 7,350 | ||
| K4D261638K-LC40 | 8MX16 GDDR1 DRAM module featuring a latency of 0.6ns, built on CMOS architecture, and encased in a PDSO66 package | SAMSUNG | 3~7 Days | 7,893 | ||
| MT46V32M16P--5B:J | MT46V32M16P-5B:J | MICRON | 3~7 Days | 7,590 | ||
| K4H561638F-TCB3 | Plastic DDR SDRAM with 16M x 16 capacity | SAMSUNG | 3~7 Days | 6,130 | ||
| HY5DU561622FTP-5 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | HYNIX | 3~7 Days | 5,657 | ||
| K4H561638N-LCB3 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66 | SAMSUNG | 3~7 Days | 6,887 | ||
| HY5DU561622CT-4 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | HYNIX | 3~7 Days | 7,249 | ||
| HY5DU281622ETP-5 | DDR DRAM, 8MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 | HYNIX | 3~7 Days | 4,875 | ||
| H5DU1262GTR-FBC | DDR DRAM, 8MX16, 0.6ns, CMOS, PDSO66 | HYNIX | 3~7 Days | 5,333 | ||
| HY5DV281622DT-5 | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | HYNIX | 3~7 Days | 7,594 | ||
| HY5DU561622DT-J | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | HYNIX | 3~7 Days | 6,180 | ||
| MT46V64M8P-6T | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | MICRON | 3~7 Days | 5,106 | ||
| MT46V16M16P-6T | IC DRAM 256MBIT PAR 66TSOP | MICRON | 3~7 Days | 3,405 | ||
| MT46V64M8P-6T:F | Lead-free, high-speed CMOS memory component | Micron Technology | OBSOLETE | 3~7 Days | 6,743 | |
| IS43R83200D-5TL | IC DRAM 256MBIT PAR 66TSOP II | ISSI, Integrated Silicon Solution Inc | NRND | 3~7 Days | 7,334 | |
| MT46V64M8P-5B F | Double Data Rate Dynamic Random Access Memory with a capacity of 64 Megabits and organized as 8M x 8 configuration, featuring a fast access time of 0 | Micron Technology | 3~7 Days | 4,163 | ||
| AS4C64M16D1-6TCN | IC DRAM 1GBIT PAR 66TSOP II | Alliance Memory, Inc. | ACTIVE | 3~7 Days | 7,405 | |
| A3S56D40GTP-50 | DRAM DDR1 256Mb, 16Mx16, 200MHz a.CL3, 2.5V, TSOPII-66 | Zentel | 3~7 Days | 7,618 | ||
| AS4C4M16D1A-5TAN | High-performance RAM for automotive application | Alliance Memory | 3~7 Days | 2,934 | ||
| IS43R86400F-6TLI-TR | Advanced memory chip for demanding applications requiring fast access times and high capacity storage | Issi | 3~7 Days | 3,275 | ||
| IS43R16320F-5TLI-TR | Packaged in 66-Pin Thin Small Outline Package (TSOP-II) Tape and Reel | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 9,756 | |
| IS43R16320F-6TLI-TR | Fast and reliable DRAM solution for demanding applications | Issi | 3~7 Days | 4,469 | ||
| AS4C32M16D1A-5TAN | High-performance memory solution for demanding applications, featuring a fast clock speed and high density | Alliance Memory | 3~7 Days | 3,709 | ||
| AS4C32M16D1A-5TANTR | DDR1 512m DRAM chip with 200Mhz speed, operating at 2.5 volts and featuring a 32M x 16 configuration under the product code AS4C32M16D1A-5TANTR | Alliance Memory, Inc. | ACTIVE | 3~7 Days | 9,475 | |
| AS4C32M16D1A-5TINTR | Compact and powerful memory solution: With its tiny TSSOP-- | Alliance Memory | 3~7 Days | 7,515 | ||
| AS4C32M16D1A-5TCNTR | Advanced SDRAM technology provides reliable data transfer and storage solutions | Alliance Memory | 3~7 Days | 4,148 |
Additional Package/Case