K4E2E304EA-AGCF

Name: K4E2E304EA-AGCF
Rating: 4.5 (10 reviews)

4,552 Effective Inventory

K4E2E304EA-AGCF

Effective Inventory4,552

Manufacturer Part # : K4E2E304EA-AGCF
Package/Case: FBGA
Brand: SKHYNIX
Product Categories : DRAMs

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All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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Maintain the goods in their original condition as received.

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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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K4E2E304EA-AGCF DataSheet

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Details

These circuits consist of two independent, high gain, internally frequency-compensated op-amps, specifically designed to operate from a single power supply over a wide range of voltages. The low-power supply drain is independent of the magnitude of the power supply voltage.Application areas include transducer amplifiers, DC gain blocks and all the conventional op-amp circuits, which can now be more easily implemented in single power supply systems. For example, these circuits can be directly supplied with the standard +5 V, which is used in logic systems and will easily provide the required interface electronics with no additional power supply. Features1. Internally frequency-compensated2. Large DC voltage gain: 100 dB3. Wide bandwidth (unity gain): 1.1 MHz (temperature compensated)4. Very low supply current per channel essentially independent of supply voltage5. Low input bias current: 20 nA (temperature compensated)6. Low input offset voltage: 2 mV7. Low input offset current: 2 nA8. Input common-mode voltage range includes negative rails

Key Features

1. Internally frequency-compensated2. Large DC voltage gain: 100 dB3. Wide bandwidth (unity gain): 1.1 MHz (temperature compensated)4. Very low supply current per channel essentially independent of supply voltage5. Low input bias current: 20 nA (temperature compensated)6. Low input offset voltage: 2 mV7. Low input offset current: 2 nA8. Input common-mode voltage range includes negative rails

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer

SAMSUNG

Product Category !

Memory ICs

FAQs

What is K4E2E304EA-AGCF?

The K4E2E304EA-AGCF is a 4Gb LPDDR4 (Low Power Double Data Rate 4) SDRAM (Synchronous Dynamic Random Access Memory) chip manufactured by Samsung. It is designed for high-performance and low-power consumption applications, commonly used in mobile devices, tablets, and embedded systems requiring fast and efficient memory access.

How Does K4E2E304EA-AGCF Work?

The K4E2E304EA-AGCF operates as a high-speed memory storage device that enables efficient data transfer between the processor and memory subsystem. It utilizes the LPDDR4 technology to provide increased data transfer rates and reduced power consumption compared to previous memory standards. The chip features a synchronous interface for synchronized data transfers between the memory controller and the memory chip.

How Many Pins does K4E2E304EA-AGCF have and What are the Functions of the Pinout Configuration?

The K4E2E304EA-AGCF typically comes in a BGA (Ball Grid Array) package with a specific pinout configuration that includes:

Data Pins: Multiple pins for bi-directional data transfer between the memory chip and the memory controller.
Address Pins: Pins dedicated to specifying the memory address for read or write operations.
Control Pins: Pins for control signals such as clock, chip enables, and data strobes for managing memory operations.
Power and Ground Pins: Pins for supplying power and ensuring proper grounding of the memory chip.

What are the Pros and Cons of K4E2E304EA-AGCF?

Pros:

High Performance: Offers high-speed data transfer and low latency for improved system responsiveness.
Low Power Consumption: LPDDR4 technology reduces power consumption, extending battery life in mobile devices.
High Density: Provides a large storage capacity in a compact form factor.
Reliability: Manufactured by Samsung, known for producing high-quality memory products.

Cons:

Cost: Higher density and performance may come at a higher price point compared to lower-end memory options.
Complexity: Requires a memory controller that supports LPDDR4 and careful PCB layout for optimal performance.

Are There Any Equivalents/Alternatives to K4E2E304EA-AGCF for Recommendation?

Alternative memory chips to the K4E2E304EA-AGCF include the MT53E1G32D4 from Micron and the NT5CC256M16DP-DI from Nanya Technology.
Equivalents to the K4E2E304EA-AGCF in the LPDDR4 category include chips from SK Hynix and Micron with similar specifications.

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