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FBGA Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| K4B4G1646D-BCMA | High-performance computing relies on this modul | Samsung Electro-Mechanics | 3~7 Days | 3,892 | ||
| MT41K1G16DGA-125:A | 16 Gigabyte DDR3 Dynamic Random Access Memory | Micron Technology | 3~7 Days | 4,408 | ||
| MT47H32M16HR-25E:G | High-performance memory module for demanding computing applications, featuring M x DDR DRAM and a fast access time of n | Micron Technology | 3~7 Days | 3,668 | ||
| H26M41208HPRI | Embedded MultiMedia Card with eMMC 5.1 interface | SKHYNIX | 3~7 Days | 6,520 | ||
| K4G80325FB-HC25 | Premium Memory Component for High-Speed Application | SAMSUNG | 3~7 Days | 3,303 | ||
| K4B4G1646D-BCK0 | DRAM Chip DDR3 SDRAM 4Gbit | Samsung Electronics | 3~7 Days | 6,207 | ||
| K4M56323PI-HG75 | FBGA-packaged DRAM chip for mobile devices | SAMSUNG | 3~7 Days | 6,208 | ||
| MT47H128M16HG-3IT | CMOS technology | MICRON | 3~7 Days | 7,138 | ||
| MT40A1G8WE-083E:B | High-density memory component | Micron Technology | 3~7 Days | 6,491 | ||
| H5AN8G6NCJR-VKC | The H5AN8G6NCJR-VKC chip is a high-performance NAND flash memory device designed for use in various electronic devices | SKHYNIX | 3~7 Days | 5,736 | ||
| MTFC16GAKAECN-4MIT | eMMC MLC EMMC 128G | MICRON | 3~7 Days | 5,568 | ||
| KLMAG1JETD-B041006 | MLC NAND Flash Serial e-MMC 1.8V/3.3V 128G-bit 128G x 1 | SAMSUNG | 3~7 Days | 6,000 | ||
| H5TQ4G63CFR-RDC | Reliable distributor | Sk Hynix | OBSOLETE | 3~7 Days | 7,444 | |
| K4A8G165WC-BCTD | Advanced memory technology for increased capacity and speed in computing devices | Samsung Electronics | 3~7 Days | 5,376 | ||
| MT41K512M16HA-125 AIT:A | Product description: DRAM Chip DDR3L SDRAM 8Gbit 512Mx16 1.35V Automotive AEC-Q100 96-Pin FBGA | Micron Technology | 3~7 Days | 4,757 | ||
| MT40A2G8VA-062E IT:B | Enhance your computer's performance with the Microchip Technology DDR4 16GB 2GX8 FBGA memory module | Microchip Technology | ACTIVE | 3~7 Days | 4,273 | |
| SDIN7DP2-4G | Advanced 3.3V technology | Sandisk | OBSOLETE | 3~7 Days | 8,711 | |
| MT40A512M16JY-083E AUT:B | FBGA package configuration | Micron Technology | 3~7 Days | 7,680 | ||
| MT41K1G8SN-125:A | 8GBIT Synchronous Dynamic Random Access Memory integrated circuit operating at 800MHz in a 78-pin Fine Ball Grid Array package | Micron Technology | OBSOLETE | 3~7 Days | 4,605 | |
| MT47H128M16HG-3IT:A | DDR2 SDRAM Chip | Micron Technology | OBSOLETE | 3~7 Days | 7,630 | |
| MT47H32M16HR-25E IT:G TR | Synchronous dynamic random-access memory | Micron Technology | 3~7 Days | 7,849 | ||
| MT41K1G8SN-125 IT:A | DRAM Chip DDR3L SDRAM 8Gbit | Micron Technology | 3~7 Days | 7,645 | ||
| MT42L128M32D1GU-25 WT:A | DRAM Chip Mobile LPDDR2 SDRAM 4Gbit 128Mx32 1.8V 134-Pin FBGA | Micron Technology | 3~7 Days | 4,835 | ||
| KLM8G1GEME-B041 | High-density memory module for embedded systems | Samsung Electronics | 3~7 Days | 2,699 | ||
| AC82PM45 SLB97 | Advanced power management at its core | Intel Corporation | 3~7 Days | 5,667 | ||
| KLMCG8GEND-B031 | 8-bit Data Bus Width | SAMSUNG | 3~7 Days | 5,437 | ||
| K4B4G1646E-BCK0 | DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.5V 96-Pin FBGA | Samsung Artik | 3~7 Days | 5,832 | ||
| K4B4G1646D-BYK0 | Key Features: The K4B4G1646D-BYK0 is a high-density memory chip, offering 4Gbit of storage in a compact 96-Pin FBGA form factor | Olimex Ltd | Obsolete | 3~7 Days | 6,798 | |
| MT41K128M16JT-125XIT:K | Stock up on DRAM components with the MT41K128M16JT-125 XIT:K bulk option" | MICRON | 3~7 Days | 7,790 | ||
| MT41K128M16JT-125AAT:K | This product is a DRAM DDR3 module with a capacity of 2 gigabytes and a memory organization of 128MX16 in FBGA form factor | MICRON | 3~7 Days | 5,263 | ||
| MT47H16M16BG-3 | Cutting-edge memory technology | MICRON | 3~7 Days | 3,689 | ||
| MT47H256M8EB-25E:C | MT47H256M8EB-25E:C is a DRAM chip that features DDR2 SDRAM technology with a capacity of 2Gbit | Micron Technology | 3~7 Days | 5,896 | ||
| MT46V16M16CY-5B:M | 256Mbit DDR SDRAM Memory Chip operating at 200MHz with 700ps latency, contained in a 60-pin Fine-Pitch Ball Grid Array package | Micron Technology | 3~7 Days | 4,834 | ||
| MT47H256M8EB-25E IT:C | DDR2 SDRAM Chip | Micron Technology | 3~7 Days | 5,308 | ||
| K4B1G0846G-BCH9 | CMOS technology | SAMSUNG | 3~7 Days | 3,121 | ||
| MT52L512M32D2PF-107 WT:B | Compact Size and Design - Housed in a 178-pin WFBGA package, this chip is small yet powerful, ideal for space-constrained mobile devices | Micron Technology Inc. | ACTIVE | 3~7 Days | 9,561 | |
| K4A8G085WB-BIRC | The K4A8G085WB-BIRC is a compact and energy-efficient memory solution." | SAMSUNG | 3~7 Days | 4,100 | ||
| CY15B102Q-SXM | Military SPI FRAM | CYPRESS | Active | 3~7 Days | 7,606 | |
| MT29F2G08ABAEAH4-IT | 3.3V Parallel Interface | MICRON | 3~7 Days | 6,693 | ||
| K4A8G085WB-BCRC | Memory Module for High-Performance Computing Applications | Samsung Artik | 3~7 Days | 7,654 |
Additional Package/Case