MT40A1G8WE-083E:B

Name: MT40A1G8WE-083E:B
Rating: 4.5 (10 reviews)

High-density memory component

6,491 Effective Inventory

MT40A1G8WE-083E:B

Effective Inventory6,491

High-density memory component

Manufacturer Part # : MT40A1G8WE-083E:B
Package/Case: FBGA
Brand: Micron Technology
Product Categories : Memory

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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MT40A1G8WE-083E:B DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for MT40A1G8WE-083E:B or email to us: Email: [email protected], we will contact you in 12 hours.

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Details

These 1500 watt transient voltage suppressors offer power-handling capabilities only found in larger packages. They are most often used for protecting against transients from inductive switching environments or induced secondary lightning effects as found in lower surge levels of IEC61000-4-5. With very fast response times, they are also effective in protection from ESD or EFT. Powermite® package features include a full metallic bottom that eliminates the possibility of solder-flux entrapment during assembly. They also provide unique locking tab acting as an integral heat sink. With its very short terminations, parasitic inductance is minimized to reduce voltage overshoots during fast-rise-time transients.FEATURES• Very low profile surface mount package (1.1mm)• Integral heat sink-locking tabs• Compatible with automatic insertion equipment• Full metallic bottom eliminates flux entrapment• Voltage range 5 volts to 170 volts• Available in both unidirectional or bi-directional (C suffix for bi-directional)MAXIMUM RATINGS• Operating Temperature: -55°C to +150°C• Storage Temperature: -55°C to +150°C• 1500 Watt peak pulse power (10 / 1000 µsec.)• Forward Surge Current: 200 Amps at 8.3 ms (excluding bidirectional)• Repetition surge rate (duty factor): 0.01%• Thermal resistance: 2.5°C / watt junction to tab 130°C / watt junction to ambient with recommended footprint• Lead and mounting temperature: 260°C for 10 secAPPLICATIONS / BENEFITS• Secondary lightning transient protection• Inductive switching transient protection• Small footprint• Very low parasitic inductance for minimal voltage overshoot• Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively and IEC61000-4-5 for surge levels defined herein

Key Features

Very low profile surface mount package (1.1mm)
Integral heat sink-locking tabs
Compatible with automatic insertion equipment
Full metallic bottom eliminates flux entrapment
Voltage range 5 volts to 170 volts
Available in both unidirectional or bi-directional (C suffix for bi-directional)
MAXIMUM RATINGS
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
1500 Watt peak pulse power (10 / 1000 µsec.)
Forward Surge Current: 200 Amps at 8.3 ms (excluding bidirectional)
Repetition surge rate (duty factor): 0.01%
Thermal resistance: 2.5°C / watt junction to tab 130°C / watt junction to ambient with recommended footprint
Lead and mounting temperature: 260°C for 10 sec

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category !	DRAM	RoHS	Details
Type	SDRAM - DDR4	Mounting Style	SMD/SMT
Package / Case	FBGA-78	Data Bus Width	8 bit
Organization	1 G x 8	Memory Size !	8 Gbit
Maximum Clock Frequency	1.2 GHz	Supply Voltage - Max	1.26 V
Supply Voltage - Min	1.14 V	Supply Current - Max	68 mA
Minimum Operating Temperature	0 C	Maximum Operating Temperature !	+ 95 C
Series	MT40A	Brand	Micron
Product Type !	DRAM	Factory Pack Quantity	1140
Subcategory	Memory & Data Storage

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification MT40A1G8WE-083E:B PDF Download

FAQs

What is MT40A1G8WE-083E:B?

The MT40A1G8WE-083E:B is a 1Gb DDR4 SDRAM module designed by Micron Technology. It is a high-density, high-speed memory module suitable for use in a wide range of computing and networking applications, including servers, workstations, and high-performance computing systems.

How Does MT40A1G8WE-083E:B Work?

The MT40A1G8WE-083E:B works by providing synchronous dynamic random-access memory (SDRAM) functionality with a high-speed DDR4 interface. It enables fast data transfer and storage for processor operations, ensuring efficient performance in data-intensive applications.

How Many Pins does MT40A1G8WE-083E:B have and What are the Functions of the Pinout Configuration?

The MT40A1G8WE-083E:B DDR4 SDRAM module is typically designed with a 260-pin SODIMM (Small Outline Dual In-Line Memory Module) form factor. The pinout configuration includes:

Data Lines: Multiple pins for bi-directional data transfer between the SDRAM module and the system.
Address Lines: Pins for specifying the memory address for read or write operations.
Control Lines: Pins for controlling various operations such as row activation, column activation, and precharging.
Power and Ground Pins: Pins for providing power supply and ground connections to the module.
Clock and Reset Pins: Pins for clock signal input and reset signal.

What are the Pros and Cons of MT40A1G8WE-083E:B?

Pros:

High Density: Provides 1Gb of memory in a single module, enabling higher memory capacity in space-constrained systems.
High Speed: Offers high-speed DDR4 interface for rapid data transfer and access.
Low Power Consumption: Operates at low voltage levels, contributing to energy efficiency.
Wide Compatibility: Compatible with a variety of computing and networking platforms designed for DDR4 memory.
Reliable Performance: Provides stable and reliable memory operations for demanding applications.

Cons:

Cost: Higher density and speed may lead to a higher cost compared to lower-density or older generation memory modules.
Compatibility: Requires compatibility with DDR4-enabled systems and may not be backward compatible with older DDR standards.
Complexity: DDR4 module design and layout may require careful consideration for signal integrity and timing.

Are There Any Equivalents/Alternatives to MT40A1G8WE-083E:B for Recommendation?

Similar high-density DDR4 SDRAM modules include the Samsung M378A1G43DB0-CPB and the Hynix HMA81GS6DJR8N-XN.
Alternatives to the MT40A1G8WE-083E:B include DDR4 SDRAM modules from other manufacturers such as Samsung, SK Hynix, and Kingston.