MT48LC16M16A2P-6AIT:G
TSOP-II packageMT48LC16M16A2P-6AIT:G
TSOP-II package
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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MT48LC16M16A2P-6AIT:G DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
Offering a total DRAM density of 256Mbit, the MT48LC16M16A2P-6A IT:G is a 16M x 16bit memory module designed for efficient data storage and retrieval. With a clock frequency of 166MHz, this DRAM module ensures fast performance in computing systems. Its TSOP memory case style and 54 pins make it compatible with a wide range of devices. Operating at a nominal voltage of 3.3V and featuring an access time of 6ns, this DRAM module is suitable for applications requiring quick and reliable data access. The MT48LC16M16A2P-6A IT:G is tested to perform within a temperature range of -40 to 85 degrees Celsius, making it a versatile memory solution for various environments
Key Features
- Low power consumption mode available
- Fast read speed up to 166 MHz
- Data transfer rate up to 1333 Mbps
Application
- Reliable operation
- Fast data transfer
- Long-lasting durability
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Active | Part Package Code | TSOP2 |
Pin Count ! | 54 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | HTS Code ! | 8542.32.00.24 |
Access Mode ! | FOUR BANK PAGE BURST | Access Time-Max | 5.4 ns |
Additional Feature ! | AUTO/SELF REFRESH | Clock Frequency-Max (fCLK) | 167 MHz |
I/O Type | COMMON | Interleaved Burst Length | 1,2,4,8 |
JESD-30 Code | R-PDSO-G54 | Length | 22.22 mm |
Memory Density | 268435456 bit | Memory IC Type | SYNCHRONOUS DRAM |
Memory Width | 16 | Number of Functions | 1 |
Number of Ports ! | 1 | Number of Terminals | 54 |
Number of Words | 16777216 words | Number of Words Code | 16000000 |
Operating Mode ! | SYNCHRONOUS | Operating Temperature-Max | 85 °C |
Operating Temperature-Min | -40 °C | Organization | 16MX16 |
Output Characteristics | 3-STATE | Package Body Material | PLASTIC/EPOXY |
Package Code | TSOP2 | Package Equivalence Code | TSOP54,.46,32 |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE, THIN PROFILE |
Peak Reflow Temperature (Cel) | 260 | Power Supplies ! | 3.3 V |
Qualification Status ! | Not Qualified | Refresh Cycles | 8192 |
Seated Height-Max | 1.2 mm | Self Refresh | YES |
Sequential Burst Length | 1,2,4,8,FP | Standby Current-Max | 0.0025 A |
Supply Current-Max | 0.1 mA | Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 3 V | Supply Voltage-Nom (Vsup) | 3.3 V |
Surface Mount ! | YES | Technology | CMOS |
Temperature Grade ! | INDUSTRIAL | Terminal Form ! | GULL WING |
Terminal Pitch ! | 0.8 mm | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Width | 10.16 mm |
Package | Tray | Product Status | Active |
Programmable | Not Verified | Memory Type ! | Volatile |
Memory Format | DRAM | Memory Size ! | 256Mbit |
Memory Organization | 16M x 16 | Memory Interface ! | Parallel |
Clock Frequency | 167 MHz | Write Cycle Time - Word, Page | 12ns |
Access Time | 5.4 ns | Voltage - Supply | 3V ~ 3.6V |
Operating Temperature ! | -40°C ~ 85°C (TA) | Mounting Type | Surface Mount |
Package / Case | 54-TSOP (0.400", 10.16mm Width) | Supplier Device Package | 54-TSOP II |
Base Product Number | MT48LC16M16A2 |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is MT48LC16M16A2P-6AIT:G?
The MT48LC16M16A2P-6AIT:G is a 256Mb DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) organized as 16M words of 16 bits. It is designed by Micron Technology and is suitable for high-speed memory applications in various electronic systems, including computer systems, networking equipment, and telecommunications devices.
How Does MT48LC16M16A2P-6AIT:G Work?
The MT48LC16M16A2P-6AIT:G operates as a high-speed memory device that can read from or write to its memory cells at both the rising and falling edges of the clock signal. The double data rate capability allows for higher data transfer rates compared to traditional SDRAM, making it suitable for demanding memory-intensive applications.
How Many Pins does MT48LC16M16A2P-6AIT:G have and What are the Functions of the Pinout Configuration?
The MT48LC16M16A2P-6AIT:G utilizes a 54-pin TSOP II (Thin Small Outline Package) package. The pinout configuration includes:
- VDD: Power supply pin for the device.
- VSS: Ground connection pin.
- DQ0-DQ15: Bi-directional data input/output pins.
- WE: Write enable input pin.
- RAS: Row address strobe input pin.
- CAS: Column address strobe input pin.
- CS: Chip select input pin.
- CLK: Clock input pin for synchronization.
- DM0-DM7: Data mask control pins.
What are the Pros and Cons of MT48LC16M16A2P-6AIT:G?
Pros:
- High-speed Operation: Offers high-speed data transfer with the double data rate capability.
- High Density: Provides a large memory capacity in a compact package, suitable for space-constrained designs.
- Wide Application: Suitable for a wide range of applications in computer systems, networking, and telecommunications.
- Compatibility: DDR SDRAM technology enables compatibility with existing memory interfaces and controllers.
- Performance: Provides reliable and consistent performance for memory-intensive tasks.
Cons:
- Complex Interface: Requires careful timing and control signals for proper operation.
- Power Consumption: Can consume more power compared to low-power memory alternatives.
- Cost: Higher density and performance may result in a higher cost compared to lower-density memory options.
Are There Any Equivalents/Alternatives to MT48LC16M16A2P-6AIT:G for Recommendation?
- The IS42S16400J from ISSI is a similar 256Mb DDR SDRAM offering with comparable features.
- Alternatives to the MT48LC16M16A2P-6AIT:G include the K4H511638D from Samsung and the W9864G6KH-6 from Winbond.
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