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| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| MT36KSF1G72PZ-1G4K1 | Memory modules that are 8GB RDIMM DDR3 for your computer | MICRON | 3~7 Days | 4,779 | ||
| MT46H64M16LFCK-6 | 5.5ns CMOS PBGA60 | MICRON | 3~7 Days | 3,339 | ||
| MT46H64M16LFBF-6IT:B | 1GBIT Parallel 60VFBGA MT46H64M16LFBF-6 IT:B IC DRAM | MICRON | OBSOLETE | 3~7 Days | 7,721 | |
| MT36HTF1G72PZ-667C1 | MT36HTF1G72PZ-667C1 Memory Modules DDR2 8GB | MICRON | 3~7 Days | 7,365 | ||
| K4B4G0846B-HYK0 | Low-voltage 1.35V technology | SAMSUNG | 3~7 Days | 7,622 | ||
| EP2C20F484C6N | Voltage requirement of 1.2V with 484-pin FBGA package | Intel | ACTIVE | 3~7 Days | 9,035 | |
| NT5AD256M16B2-GN | TFBGA-96 PBGA96 CMOS DDR DRAM 256MX16 | SAMSUNG | 3~7 Days | 3,930 | ||
| MTFC4GLDEA-0MWT | NAND Memory IC with 153-WFBGA packaging | MICRON | 3~7 Days | 6,650 | ||
| MTFC4GLDDQ-4MIT | FLASH Memory IC | MICRON | 3~7 Days | 5,983 | ||
| MT36KSF2G72PZ-1G6P1 | DDR3L SDRAM 16GB RDIMM Module - Trays | MICRON | 3~7 Days | 6,485 | ||
| K4B4G0846E-BYMA | High Density Memory Module with 4Gbit Capacity and 1.35V/1.5V Voltage Support | Samsung Artik | 3~7 Days | 7,456 | ||
| K4A8G165WB-BIRC | Our K4A8G165WB-BIRC memory chip offers unparalleled storage capacity and low power consumption, making it an ideal choice for emerging technologies | Samsung Electronics | ACTIVE | 3~7 Days | 8,452 | |
| K4A4G165WE-BIRC | K4A4G165WE-BIRC: High-density DRAM in FBGA-96 package | Samsung Artik | 3~7 Days | 3,815 | ||
| H5TC4G63EFR-RDI | Parallel 933 MHz | SKhynix | 3~7 Days | 7,881 | ||
| 5CGTFD5C5F27I7N | With its combination of high cell count and cutting-edge technology, this FPGA is ideal for demanding tasks in a range of industries." | Intel | ACTIVE | 3~7 Days | 7,207 | |
| MT40A256M16GE-075E IT:B | 4Gb 1.2V 96-Pin FBGA | Micron Technology | 3~7 Days | 346 | ||
| MT47H64M16HW-3IT | MT47H64M16HW-3IT is a DDR2 SDRAM chip with 1 Gb capacity, operating at 667 MHz with a 1.8V supply voltage. | MICRON | 3~7 Days | 6,736 | ||
| MT18KDF1G72PDZ-1G6P1 | DDR3 SDRAM 8Gbyte 240RDIMM Tray DRAM Module | MICRON | 3~7 Days | 7,964 | ||
| MT41J64M16LA | MT41J64M16LA is a DDR3 SDRAM chip with 4Gb capacity and a 1.5V power supply voltage. | MICRON | 3~7 Days | 7,828 | ||
| MT41J128M16HA-15E | This memory module has a 128MX16 configuration and is constructed using CMOS technology | MICRON | 3~7 Days | 5,009 | ||
| MT41J64M16JT-15EIT | MT41J64M16JT-15EIT is a high-speed, low-power DDR3 SDRAM chip with 4Gb capacity. | MICRON | 3~7 Days | 5,513 | ||
| MTFC16GJGDQ-AIT:Z | 128G EMMC MLC eMMC MTFC16GJGDQ-AIT Z | MICRON | 3~7 Days | 5,724 | ||
| H5TQ4G43MFR | H5TQ4G43MFR is a 4Gb LPDDR3 memory chip by SK Hynix, commonly used in mobile devices. | SKHYNIX | 3~7 Days | 3,024 | ||
| MT41K128M16JT-107 IT | MT41K128M16JT-107 IT is a high-speed, low power DDR3 SDRAM chip with 2GB capacity. | MICRON | 3~7 Days | 7,403 | ||
| MT41K256M16HA-125AAT | DDR3 SDRAM chip with 4 Gb capacity, 1.25 ns cycle time, 125 MHz clock frequency. | MICRON | 3~7 Days | 5,113 | ||
| MT8KTF51264AZ-1G9P1 | DDR DRAM Module | MICRON | 3~7 Days | 3,844 | ||
| K4A8G165WB-BCPB | The K4A8G165WB-BCPB is a FBGA-96 DRAM chip that is environmentally friendly and ROHS-certified | SAMSUNG | 3~7 Days | 4,787 | ||
| MT18KDF1G72PZ-1G6P1 | 240RDIMM Tray DRAM Module DDR3L SDRAM 8Gbyte | MICRON | 3~7 Days | 4,862 | ||
| MTA9ASF1G72PZ-2G6D1 | DDR4 8GB RDIMM Memory Modules | MICRON | 3~7 Days | 6,397 | ||
| MT53B1024M32D4NQ-062 WT | MT53B1024M32D4NQ-062 WT is a DDR4 memory chip with 1024Mx32 configuration. | MICRON | 3~7 Days | 7,933 | ||
| KLM8G1GEUF-B04Q | High performance flash storage solution for automobiles | SAMSUNG | 3~7 Days | 7,112 | ||
| H5AN8G8NMFR-TFC | DDR DRAM 1GX8 CMOS PBGA78 FBGA-78 | SKHYNIX | 3~7 Days | 4,219 | ||
| K4B4G0846E-BYK0 | Cutting-edge DDR3L DRAM chip, offering a 512MX8 configuration in a compact PBGA78 package, ideal for various memory-intensive applications | Samsung Artik | 3~7 Days | 5,512 | ||
| H5AN4G8NAFR-TFC | DDR4 SDRAM chip for networking and automotive applications. | SKHYNIX | 3~7 Days | 3,329 | ||
| K4A8G045WB-BCRC | FBGA-78 DRAM with RoHS certification | Samsung Artik | 3~7 Days | 3,290 | ||
| MTA72ASS8G72LZ-2G6D2 | Tray of 64GB DDR4 SDRAM 288LRDIMM Modules | MICRON | 3~7 Days | 5,322 | ||
| K4T2G084QA-HCE6 | DDR DRAM, 256MX8, 0.45ns, CMOS, PBGA68 | SAMSUNG | 3~7 Days | 7,276 | ||
| MT25QL256ABA1EW9 | MT25QL256ABA1EW9 chip is a high-speed, low-power, 256Mb SPI NOR flash memory device. | MICRON | 3~7 Days | 6,359 | ||
| K4F8E3S4HB-MHCJ | Advanced FBGA-200 Memory Solution | SAMSUNG | 3~7 Days | 6,386 | ||
| K4B2G1646Q-BCMA | DDR4 SDRAM chip by Samsung with 16Gb density and 2133 Mbps data rate. | SAMSUNG | 3~7 Days | 3,550 |
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