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MT29F2G08ABAEAH4-IT
3.3V Parallel Interface
MT29F2G08ABAEAH4-IT
3.3V Parallel Interface
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Service & Packaging
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MT29F2G08ABAEAH4-IT DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
General DescriptionMicron NAND Flash devices include an asynchronous data interface for high-perform ance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands,address, and data. There are five control signals used to implement the asyn chronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#).Features• Open NAND Flash Interface (ONFI) 2.2-compliant1• Multiple-level cell (MLC) technology• Organization – Page size x8: 8640 bytes (8192 + 448 bytes) – Block size: 256 pages (2048K + 112K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 64Gb: 4096 blocks; 128Gb: 8192 blocks; 256Gb: 16,384 blocks; 512Gb: 32,786 blocks• Synchronous I/O performance – Up to synchronous timing mode 5 – Clock rate: 10ns (DDR) – Read/write throughput per pin: 200 MT/s• Asynchronous I/O performance– Up to asynchronous timing mode 5–tRC/tWC: 20ns (MIN)• Array performance – Read page: 50µs (MAX) – Program page: 1300µs (TYP) – Erase block: 3ms (TYP)• Operating Voltage Range – VCC: 2.7–3.6V – VCCQ: 1.7–1.95V, 2.7–3.6V• Command set: ONFI NAND Flash Protocol• Advanced Command Set – Program cache – Read cache sequential – Read cache random – One-time programmable (OTP) mode – Multi-plane commands – Multi-LUN operations – Read unique ID – Copyback• First block (block address 00h) is valid when shipped from factory. For minimum required ECC, see Error Management (page 109).• RESET (FFh) required as first command after power on• Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status• Data strobe (DQS) signals provide a hardware method for synchronizing data DQ in the synchronous interface• Copyback operations supported within the plane from which data is read• Quality and reliability – Data retention: 10 years – Endurance: 5000 PROGRAM/ERASE cycles• Operating temperature: – Commercial: 0°C to +70°C – Industrial (IT): –40ºC to +85ºC• Package – 52-pad LGA – 48-pin TSOP – 100-ball BGA
Key Features
- Open NAND Flash Interface (ONFI) 2.2-compliant1
- Multiple-level cell (MLC) technology
- Organization
- – Page size x8: 8640 bytes (8192 + 448 bytes)
- – Block size: 256 pages (2048K + 112K bytes)
- – Plane size: 2 planes x 2048 blocks per plane
- – Device size: 64Gb: 4096 blocks;
- 128Gb: 8192 blocks;
- 256Gb: 16,384 blocks;
- 512Gb: 32,786 blocks
- Synchronous I/O performance
- – Up to synchronous timing mode 5
- – Clock rate: 10ns (DDR)
- – Read/write throughput per pin: 200 MT/s
- Asynchronous I/O performance
- – Up to asynchronous timing mode 5
- tRC/tWC: 20ns (MIN)
- Array performance
- – Read page: 50µs (MAX)
- – Program page: 1300µs (TYP)
- – Erase block: 3ms (TYP)
- Operating Voltage Range
- – VCC: 2.7–3.6V
- – VCCQ: 1.7–1.95V, 2.7–3.6V
- Command set: ONFI NAND Flash Protocol
- Advanced Command Set
- – Program cache
- – Read cache sequential
- – Read cache random
- – One-time programmable (OTP) mode
- – Multi-plane commands
- – Multi-LUN operations
- – Read unique ID
- – Copyback
- First block (block address 00h) is valid when shipped
- from factory. For minimum required ECC, see
- Error Management (page 109).
- RESET (FFh) required as first command after power
- Operation status byte provides software method for
- detecting
- – Operation completion
- – Pass/fail condition
- – Write-protect status
- Data strobe (DQS) signals provide a hardware method
- for synchronizing data DQ in the synchronous
- interface
- Copyback operations supported within the plane
- from which data is read
- Quality and reliability
- – Data retention: 10 years
- – Endurance: 5000 PROGRAM/ERASE cycles
- Operating temperature:
- – Commercial: 0°C to +70°C
- – Industrial (IT): –40ºC to +85ºC
- Package
- – 52-pad LGA
- – 48-pin TSOP
- – 100-ball BGA
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| HTS Code ! | 8542.32.00.51 | Access Time-Max | 20 ns |
| Command User Interface | YES | JESD-30 Code | R-PBGA-B63 |
| Length | 11 mm | Memory Density | 2147483648 bit |
| Memory IC Type | FLASH | Memory Width | 8 |
| Number of Functions | 1 | Number of Sectors/Size | 2K |
| Number of Terminals | 63 | Number of Words | 268435456 words |
| Number of Words Code | 256000000 | Operating Mode ! | ASYNCHRONOUS |
| Operating Temperature-Max | 85 °C | Operating Temperature-Min | -40 °C |
| Organization | 256MX8 | Package Body Material | PLASTIC/EPOXY |
| Package Code | LFBGA | Package Equivalence Code | BGA63,10X12,32 |
| Package Shape | RECTANGULAR | Package Style | GRID ARRAY, LOW PROFILE, FINE PITCH |
| Page Size | 2K words | Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | Programming Voltage ! | 3.3 V |
| Ready/Busy | YES | Seated Height-Max | 1.25 mm |
| Sector Size | 128K | Standby Current-Max | 0.0001 A |
| Supply Current-Max | 0.035 mA | Supply Voltage-Max (Vsup) | 3.6 V |
| Supply Voltage-Min (Vsup) | 2.7 V | Supply Voltage-Nom (Vsup) | 3.3 V |
| Surface Mount ! | YES | Technology | CMOS |
| Temperature Grade ! | INDUSTRIAL | Terminal Form ! | BALL |
| Terminal Pitch ! | 0.8 mm | Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Type | SLC NAND TYPE |
| Width | 9 mm |
Specification Comparison
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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