MJD243T4G

Effective Inventory7,847

Bipolar Transistors - BJT 4A 100V 12.5W NPN

  • Manufacturer Part # : MJD243T4G

  • Package/Case: DPAK-3

  • Brand: Onsemi

  • Product Categories : Single Bipolar Transistors

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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MJD243T4G DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for MJD243T4G or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The MJD243T4G is a 4A NPN bipolar Power Transistor designed for low voltage, low power and high gain audio amplifier applications.

Key Features

  • Data Encryption: AES-128 (Support)
  • High Temperature Operation
    TJ = +150°C (Max) @ RH% = 60%
  • Multibyte Word Support
    IMBW = 32 bits (Typ)
  • Fully Compliant to I2C Specification
    VSCL = 100 kHz (Typ) @ fMCLK = 10 MHz
  • Low Noise Operation
    LNEXT = -20 dBm (Typ) @ fCARRIER = 2.4 GHz
  • SPI Protocol Support
    ISPIS = 30 MHz (Typ)

Application

  • Industrial
  • Power Management
  • Automotive
  • Audio

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active CAD Models
Compliance PbAHP Package Type DPAK-3
Case Outline 369C MSL Type 1
MSL Temp (°C) 260 Container Type REEL
Container Qty. 2500 ON Target N
Polarity NPN Type General Purpose
VCE(sat) Max (V) 0.6 IC Cont. (A) 4
VCEO Min (V) 100 VCBO (V) 100
VEBO (V) 7 VBE(sat) (V) 1.8
VBE(on) (V) 1.5 hFE Min 40
hFE Max 180 fT Min (MHz) 40
PTM Max (W) 12.5 Pricing ($/Unit) $0.2533Sample

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification MJD243T4G PDF Download

FAQs

What is MJD243T4G?

The MJD243T4G is a NPN Darlington Transistor designed by ON Semiconductor. It is commonly used in high-current applications such as motor drivers, solenoid drivers, and lamp drivers.

How Does MJD243T4G Work?

The MJD243T4G works by amplifying the current flowing through its collector-emitter path. The Darlington pair configuration provides high current gain, allowing the transistor to control larger load currents with a smaller base current. This makes it suitable for driving high-power loads from low-power control signals.

How Many Pins does MJD243T4G have and What are the Functions of the Pinout Configuration?

The MJD243T4G is housed in a SOT-252 (DPAK) package. The pinout configuration includes:

  • Base: Input control terminal for the transistor.
  • Collector: Output terminal for the transistor.
  • Emitter: Ground terminal for the transistor.

What are the Pros and Cons of MJD243T4G?

Pros:

  • High Current Gain: Provides high current gain for controlling large load currents.
  • Darlington Configuration: Offers high input impedance and low output impedance, suitable for interfacing with low-power control signals.
  • Thermal Performance: The SOT-252 package provides good thermal performance for heat dissipation.

Cons:

  • Voltage Drop: The Darlington configuration has a higher voltage drop compared to a single transistor, leading to power dissipation and heat generation.
  • Speed: May not be suitable for high-speed switching applications due to the inherent characteristics of the Darlington configuration.
  • Package Size: The SOT-252 package may be larger than other surface-mount packages, affecting board space in compact designs.

Are There Any Equivalents/Alternatives to MJD243T4G for Recommendation?

Equivalents to the MJD243T4G include the TIP122 from STMicroelectronics and the 2N6045G from ON Semiconductor. Alternatives to the MJD243T4G include the TIP121 and TIP125 from STMicroelectronics.

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