MMDT5451-7-F
The MMDT5451-7-F from Diodes Inc is a dual NPN+PNP bipolar transistorMMDT5451-7-F
The MMDT5451-7-F from Diodes Inc is a dual NPN+PNP bipolar transistor
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Manufacturer Part # : MMDT5451-7-F
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Package/Case: SOT-363-6
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Part Status : ACTIVE
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Brand: Diodes Incorporated
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Product Categories : Bipolar Transistor Arrays
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RoHS:
Quality Assurance
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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MMDT5451-7-F DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
In addition to its technical specifications, the MMDT5451-7-F is designed for durability, with a maximum operating temperature of 150°C. This feature enables reliable performance even in harsh environmental conditions, making it suitable for industrial and automotive applications where temperature extremes are common
Key Features
- PNP transistor with a collector current of 500 mA
- Designed for general purpose amplifier and switching applications
- High collector current capability and low collector-emitter saturation voltage
- Small and thin package (SOT-23) for easy mounting and installation
- Compliant with RoHS and lead-free regulations
Application
- Audio amplifiers
- Mixers
- Sensors
- Signal processing circuits
- Pulse and waveform generators
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Status | Active | Transistor Type | NPN, PNP |
Current - Collector (Ic) (Max) | 200mA | Voltage - Collector Emitter Breakdown (Max) | 160V, 150V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA | Current - Collector Cutoff (Max) | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V / 60 @ 10mA, 5V | Power - Max | 200mW |
Frequency - Transition | 300MHz | Operating Temperature ! | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Package / Case | SOT-363-6 |
Supplier Device Package | SOT-363 | Base Product Number | MMDT5451 |
Manufacturer | Diodes Incorporated | Product Category ! | Bipolar Transistors - BJT |
RoHS | Details | Mounting Style | SMD/SMT |
Transistor Polarity | NPN, PNP | Configuration | Dual |
Collector- Emitter Voltage VCEO Max | 160 V, 150 V | Collector- Base Voltage VCBO | 180 V, 160 V |
Emitter- Base Voltage VEBO | 6 V | Collector-Emitter Saturation Voltage | 200 mV, 500 mV |
Maximum DC Collector Current | 200 mA | Pd - Power Dissipation | 200 mW |
Gain Bandwidth Product fT | 300 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Series | MMDT54 |
Brand | Diodes Incorporated | Continuous Collector Current | - 200 mA |
DC Collector/Base Gain hfe Min | 60 | DC Current Gain hFE Max | 240 |
Height | 1 mm | Length | 2.2 mm |
Product Type ! | BJTs - Bipolar Transistors | Factory Pack Quantity | 3000 |
Subcategory | Transistors | Technology | Si |
Width | 1.35 mm | Unit Weight | 0.000212 oz |
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