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SOT-363-6 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| ABA-54563-BLKG | DC to 3.4 GHz RF signal booster with 23 dB amplification | Broadcom Limited | 3~7 Days | 5,146 | ||
| ABA-31563-TR1G | RF Amplifier covering DC to 3.5GHz with 21.5dB gain | Broadcom Limited | Discontinued | 3~7 Days | 7,536 | |
| SI1869DH-T1-E3 | With its efficient load switching capabilities, the SI1869DH-T1-E3 is ideal for applications requiring precise control and power management | Vishay | Active | 3~7 Days | 6,278 | |
| ABA-53563-TR1G | This RF amplifier covers frequencies from DC to 3.5 GHz with a gain of 21.5dB | AVAGO | 3~7 Days | 6,451 | ||
| PUMH11,115 | Trans Digital BJT NPN 50V 100mA 300mW 6-Pin TSSOP T/R | NEXPERIA | ACTIVE | 3~7 Days | 5,563 | |
| PUMD9,115 | Trans Digital BJT NPN/PNP 50V 100mA 300mW 6-Pin TSSOP T/R | NEXPERIA | ACTIVE | 3~7 Days | 7,690 | |
| PUMB10,115 | Trans Digital BJT PNP 50V 100mA 300mW Automotive AEC-Q101 6-Pin TSSOP T/R | NEXPERIA | ACTIVE | 3~7 Days | 4,008 | |
| MGA-61563-TR1G | RF Amplifier for 3 or 5V applications | Broadcom Limited | Active | 3~7 Days | 4,279 | |
| MGA-68563-TR1G | Amplify your RF signal with this cutting-edge driver amplifier RFIC" | Broadcom Limited | 3~7 Days | 3,639 | ||
| DMG1016UDW-7 | 1.066A I(D), 20V | Diodes Incorporated | ACTIVE | 3~7 Days | 6,474 | |
| BAS70TW-7-F | BAS70TW-7-F is a Schottky Barrier Diode (SBD) with three independent diodes, capable of carrying currents up to 70mA | Diodes Incorporated | 3~7 Days | 4,333 | ||
| 74LVC2G14GW,125 | Inverters 74LVC2G14GW/SOT363/SC-88 | Nexperia | ACTIVE | 3~7 Days | 4,638 | |
| SI1926DL-T1-E3 | SOT-363 Surface Mount | Vishay | Active | 3~7 Days | 4,580 | |
| SI1443EDH-T1-GE3 | Tape and Reel Packaged Transistor | Vishay | 3~7 Days | 7,167 | ||
| SI1480DH-T1-GE3 | N-Channel Silicon MOSFET | Vishay | 3~7 Days | 3,901 | ||
| SI1427EDH-T1-GE3 | Transistorized Metal-Oxide Semiconductor Field-Effect Transistor with P-channel configuration | Vishay | Active | 3~7 Days | 3,988 | |
| AG302-63G | Wide frequency range of operation | TRIQUINT | NRND | 3~7 Days | 7,988 | |
| 2N7002DW-7-F | SOT363 Transistor | Diodes Incorporated | obsolete | 3~7 Days | 9,757 | |
| 2N7002DW-TP | Dual N-Channel Mosfet | MCC | 3~7 Days | 4,259 | ||
| MMDT5451-7-F | The MMDT5451-7-F from Diodes Inc is a dual NPN+PNP bipolar transistor | Diodes Incorporated | ACTIVE | 3~7 Days | 7,044 | |
| TQP369184 | This amplifier has a gain of 20.6dB and is designed for a 50 Ohm impedance." | QORVO | 3~7 Days | 6,806 | ||
| TQP369181 | Amplifier for RF Signals with Frequency Range from DC to 6GHz | QORVO | 3~7 Days | 5,603 | ||
| 2N7002DW H6327 | MOSFET 2N-CH 60V 0.3A SOT363 | INFINEON | Obsolete | 3~7 Days | 7,433 | |
| 2N7002DWH6327 | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6 | INFINEON | Active | 3~7 Days | 5,333 | |
| UM6K31N | 2.5V Drive Nch Nch MOSFET | ROHM | 3~7 Days | 6,750 | ||
| NXB0101GWH | Simple voltage level shifting solution for various circuits | Nexperia | 3~7 Days | 3,138 | ||
| NXB0101GW-Q100H | Translation - Voltage Levels NXB0101GW-Q100/SOT363/SC-88 | Nexperia USA Inc. | ACTIVE | 3~7 Days | 9,176 | |
| PUMH13-QF | Bipolar Transistors - Pre-Biased PUMH13-Q/SOT363/SC-88 | Nexperia USA Inc. | ACTIVE | 3~7 Days | 9,354 | |
| PUMD2-QZ | Bipolar Transistors - Pre-Biased PUMD2-Q/SOT363/SC-88 | Nexperia USA Inc. | ACTIVE | 3~7 Days | 6,384 | |
| PUMD2-QH | Bipolar Transistors - Pre-Biased PUMD2-Q/SOT363/SC-88 | Nexperia USA Inc. | ACTIVE | 3~7 Days | 8,474 | |
| DMC3400SDW-7 | Dual-mode Transistor with 30V and 0.65A/0.45A Capacity in 6-Pin SOT-363 Housing | Diodes Incorporated | ACTIVE | 3~7 Days | 6,462 | |
| UMD5NTR | Bias Resistor Built-in Transistor | Rohm Semiconductor | ACTIVE | 3~7 Days | 8,319 | |
| SGA-4563Z | DC-2.5GHz RF Amplifier with 20.2dB SSG and low 2.4dB NF | Qorvo | 3~7 Days | 3,940 | ||
| SGA-3563Z | It comes in a SOT-363 package with 6 pins for easy installation and connection | Qorvo | 3~7 Days | 3,246 | ||
| SGA-4363Z | High-Gain RF Amplifier for DC-4GHz Applications | Qorvo | 3~7 Days | 2,853 | ||
| NVTJD4001NT1G | Trans MOSFET N-CH 30V 0.25A Automotive AEC-Q101 6-Pin SC-88 T/R | Onsemi | ACTIVE | 3~7 Days | 8,939 | |
| BCR183S | BCR183S comprises pre-biased bipolar transistors designed for specific applications | Infineon | ACTIVE | 3~7 Days | 6,506 | |
| UMD2NTR | Bias resistor equipped dual digital transistor containing NPN and PNP types, enclosed in SOT-363 package | Rohm Semiconductor | ACTIVE | 3~7 Days | 7,967 | |
| UMD12NTR | Features: '68@5mA, 5V, 150mW 100mA 50V 500nA SOT-323-6 | Rohm Semiconductor | ACTIVE | 3~7 Days | 8,624 | |
| MGA-62563-BLKG | Signal voltage amplifier with 22 decibel gain | Broadcom Limited | OBSOLETE | 3~7 Days | 8,005 |
Additional Package/Case