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SI1869DH-T1-E3
With its efficient load switching capabilities, the SI1869DH-T1-E3 is ideal for applications requiring precise control and power managementSI1869DH-T1-E3
With its efficient load switching capabilities, the SI1869DH-T1-E3 is ideal for applications requiring precise control and power management
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Service & Packaging
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SI1869DH-T1-E3 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The SI1869DH-T1-E3 is a dual NPN/PNP MOSFET designed for use in applications requiring both NPN and PNP transistors. With a 20V drain-source voltage rating and a small SC-70 package, this transistor is suitable for low-voltage and space-constrained designs. Its ability to handle a continuous drain current of 1.2A for both the N-channel and the P-channel makes it a versatile choice for various circuit designs
Key Features
- The SI1869DH-T1-E3 is a MOSFET transistor that offers low on-resistance, making it suitable for various power management applications such as DC-DC converters and motor control systems
- with high efficiency and reliability in a small footprint.
Application
- Automotive systems
- Power management
- Efficient power handling
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-363-6 | Transistor Polarity | P-Channel |
| Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 1.2 A | Rds On - Drain-Source Resistance | 165 mOhms |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
| Pd - Power Dissipation | 1 W | Channel Mode | Enhancement |
| Tradename | TrenchFET | Brand | Vishay Semiconductors |
| Configuration | Dual | Product Type ! | MOSFET |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Part # Aliases | SI1869DH-T1-BE3 SI1869DH-E3 | Unit Weight | 0.000265 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is SI1869DH-T1-E3?
The SI1869DH-T1-E3 is a small signal dual N-channel MOSFET designed for low voltage applications. It is manufactured by Vishay Siliconix and is widely used in various electronic circuits such as amplifiers, voltage regulators, and power management systems.
How Does SI1869DH-T1-E3 Work?
The SI1869DH-T1-E3 operates as a switch or amplifier in electronic circuits. As a MOSFET, it can control the flow of current between its source and drain terminals based on the voltage applied to the gate terminal. This allows it to act as a high-speed switch or as an amplifying element in signal processing circuits.
How Many Pins does SI1869DH-T1-E3 have and What are the Functions of the Pinout Configuration?
The SI1869DH-T1-E3 typically comes in a compact 6-pin DFN (Dual Flat No-Lead) package. The pinout configuration includes:
- GATE1: Gate terminal for the first MOSFET.
- SOURCE1: Source terminal for the first MOSFET.
- DRAIN1: Drain terminal for the first MOSFET.
- GATE2: Gate terminal for the second MOSFET.
- SOURCE2: Source terminal for the second MOSFET.
- DRAIN2: Drain terminal for the second MOSFET.
What are the Pros and Cons of SI1869DH-T1-E3?
Pros:
- Low Voltage Operation: Suitable for low voltage applications and portable devices.
- High-Speed Switching: Offers fast switching speeds for efficient circuit operation.
- Compact Package: Comes in a space-saving DFN package for compact designs.
- Efficient Power Management: Ideal for power management systems due to its low on-state resistance.
Cons:
- Limited Power Handling: May not be suitable for high-power applications due to its low voltage rating.
- Thermal Performance: Heat dissipation may be a concern in high current applications.
- Gate Drive Voltage: Requires proper gate voltage control for optimal performance.
Are There Any Equivalents/Alternatives to SI1869DH-T1-E3 for Recommendation?
- Similar MOSFET options to the SI1869DH-T1-E3 include the AO6402 from Alpha & Omega Semiconductor and the BSS138 from ON Semiconductor.
- Alternative dual MOSFET solutions can be found in products like the IRF7342 from Infineon and the SI2319DS-T1-GE3 from Vishay Siliconix.
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