SI1869DH-T1-GE3
Power Load Distribution Switch, High Side, Active High/Active Low, 20 V, 1.2 A, 0.132 ohm, SC-70-6SI1869DH-T1-GE3
Power Load Distribution Switch, High Side, Active High/Active Low, 20 V, 1.2 A, 0.132 ohm, SC-70-6
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Manufacturer Part # : SI1869DH-T1-GE3
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Package/Case: SC
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Part Status : Active
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Brand: VISHAY
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Product Categories : Power Distribution Switches, Load Drivers
Quality Assurance
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
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Initiate the application within 90 days from the shipment date.
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About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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SI1869DH-T1-GE3 DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
Designed for high-efficiency power management applications, the SI1869DH-T1-GE3 is a dual N-channel MOSFET that offers a combination of low on-resistance and a high current rating. Manufactured by Vishay Siliconix, this MOSFET is particularly suitable for use in DC-DC converters and synchronous rectification, where it significantly reduces power losses and improves overall system efficiency. Packaged in a compact and thermally efficient PowerPAK® SO-8 package, the "T1" designation indicates its space-efficient design, while the "GE3" suffix highlights its lead (Pb)-free and RoHS-compliant construction. With its dual-channel configuration, the SI1869DH-T1-GE3 enables synchronous rectification and is widely chosen for power management applications that require reliable performance and thermal efficiency
Key Features
- SI18-GE3 integrates high-efficiency power conversion and motor control
- Low RDS(on) MOSFET ensures efficient energy transfer and low losses
- Suitable for voltage conversion, motor control and other power applications
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Category | Integrated Circuits (ICs)Power Management (PMIC)Power Distribution Switches, Load Drivers | Mfr | Vishay Siliconix |
Series | - | Package | Tape & Reel (TR)Cut Tape (CT)® |
Product Status | Active | Switch Type ! | General Purpose |
Number of Outputs | 1 | Ratio - Input:Output | 1:1 |
Output Configuration | High Side | Output Type | P-Channel |
Interface | On/Off | Voltage - Load | 1.8V ~ 20V |
Voltage - Supply (Vcc/Vdd) | - | Current - Output (Max) | 1.2A |
Rds On (Typ) | 132mOhm | Input Type | - |
Features | Slew Rate Controlled | Fault Protection ! | - |
Operating Temperature ! | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Supplier Device Package | SC-70-6 | Package / Case | 6-TSSOP, SC-88, SOT-363 |
Base Product Number | SI1869 |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is SI1869DH-T1-GE3?
The SI1869DH-T1-GE3 is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Vishay Siliconix. It is specifically designed for use in power management applications, such as voltage regulation, battery charging, and power conversion.
How Does SI1869DH-T1-GE3 Work?
The SI1869DH-T1-GE3 operates as a switch to control the flow of current in electronic circuits. As an N-channel MOSFET, it allows current to flow between the source and drain terminals when a sufficient voltage is applied to the gate terminal. It is commonly used to regulate power flow and control electronic devices.
How Many Pins does SI1869DH-T1-GE3 have and What are the Functions of the Pinout Configuration?
The SI1869DH-T1-GE3 is housed in a PowerPAK SO-8 package. The pinout configuration includes:
- Gate (G): Controls the conductivity of the MOSFET.
- Source (S): Connection for the current flow.
- Drain (D): Terminal where the current exits.
- Body (B): Usually connected to the source for enhancement mode MOSFETs.
What are the Pros and Cons of SI1869DH-T1-GE3?
Pros:
- High Efficiency: Offers low RDS(on) for reduced power dissipation.
- Fast Switching Speed: Enables rapid response in power management applications.
- High Power Handling: Capable of handling moderate to high power levels.
- Compact Package: PowerPAK SO-8 package is space-efficient and thermally efficient.
Cons:
- Gate Voltage Limit: Requires appropriate gate-source voltage for proper operation.
- Heat Dissipation: May require additional heat sinking for high-power applications.
Are There Any Equivalents/Alternatives to SI1869DH-T1-GE3 for Recommendation?
- The Si4842DY-T1-GE3 from Vishay Siliconix is an alternative dual N-channel MOSFET with similar characteristics.
- Equivalents to the SI1869DH-T1-GE3 include the FDS8884 from Fairchild Semiconductor and the NDP6020P from ON Semiconductor.
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