MT48LC8M16A2TG-7E

Name: MT48LC8M16A2TG-7E
Rating: 4.5 (10 reviews)

Double Data Rate Synchronous Dynamic Random Access Memory

6,770 Effective Inventory

MT48LC8M16A2TG-7E

Effective Inventory6,770

Double Data Rate Synchronous Dynamic Random Access Memory

Manufacturer Part # : MT48LC8M16A2TG-7E
Package/Case: TSOP-54
Brand: MICRON
Product Categories : DC DC Switching Controllers

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

About Shipping

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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MT48LC8M16A2TG-7E DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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Please submit RFQ for MT48LC8M16A2TG-7E or email to us: Email: [email protected], we will contact you in 12 hours.

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Details

General DescriptionThe 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-bit banks is organized as 4096 rows by 2048 columns by 4 bits. Each of the x8’s 33,554,432-bit banks is organized as 4096 rows by 1024 columns by 8 bits. Each of the x16’s 33,554,432-bit banks is organized as 4096 rows by 512 columns by 16 bits.Read and write accesses to the SDRAM are burst-oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA[1:0] select the bank; A[11:0] select the row). The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst access.The 128Mb SDRAM uses an internal pipelined architecture to achieve high-speed operation. This architecture is compatible with the 2n rule of prefetch architectures, but it also allows the column address to be changed on every clock cycle to achieve a high speed, fully random access. Precharging one bank while accessing one of the other three banks will hide the PRECHARGE cycles and provide seamless, high-speed, random-access operation.The 128Mb SDRAM is designed to operate in 3.3V memory systems. An auto refresh mode is provided, along with a power-saving, power-down mode. All inputs and outputs are LVTTL-compatible.The devices offer substantial advances in DRAM operating performance, including the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide precharge time, and the capability to randomly change column addresses on each clock cycle during a burst access.Features• PC100- and PC133-compliant• Fully synchronous; all signals registered on positive edge of system clock• Internal, pipelined operation; column address can be changed every clock cycle• Internal banks for hiding row access/precharge• Programmable burst lengths (BL): 1, 2, 4, 8, or full page• Auto precharge, includes concurrent auto precharge and auto refresh modes• Auto refresh mode; standard and low power – 64ms, 4096-cycle (industrial) – 16ms, 4096-cycle refresh (automotive)• LVTTL-compatible inputs and outputs• Single 3.3V ±0.3V power supply• AEC-Q100• PPAP submission• 8D response time

Key Features

PC100- and PC133-compliant
Fully synchronous; all signals registered on positive edge of system clock
Internal, pipelined operation; column address can be changed every clock cycle
Internal banks for hiding row access/precharge
Programmable burst lengths (BL): 1, 2, 4, 8, or full page
Auto precharge, includes concurrent auto precharge and auto refresh modes
Auto refresh mode; standard and low power
– 64ms, 4096-cycle (industrial)
– 16ms, 4096-cycle refresh (automotive)
LVTTL-compatible inputs and outputs
Single 3.3V ±0.3V power supply
AEC-Q100
PPAP submission
8D response time

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code	No	Rohs Code	No
Part Life Cycle Code	Obsolete	Part Package Code	TSOP2
Pin Count !	54	Reach Compliance Code	not_compliant
ECCN Code	EAR99	HTS Code !	8542.32.00.02
Access Mode !	FOUR BANK PAGE BURST	Access Time-Max	5.4 ns
Additional Feature !	AUTO/SELF REFRESH	Clock Frequency-Max (fCLK)	143 MHz
I/O Type	COMMON	Interleaved Burst Length	1,2,4,8
JESD-30 Code	R-PDSO-G54	JESD-609 Code	e0
Length	22.22 mm	Memory Density	134217728 bit
Memory IC Type	SYNCHRONOUS DRAM	Memory Width	16
Number of Functions	1	Number of Ports !	1
Number of Terminals	54	Number of Words	8388608 words
Number of Words Code	8000000	Operating Mode !	SYNCHRONOUS
Operating Temperature-Max	70 °C	Operating Temperature-Min
Organization	8MX16	Output Characteristics	3-STATE
Package Body Material	PLASTIC/EPOXY	Package Code	TSOP2
Package Equivalence Code	TSOP54,.46,32	Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE, THIN PROFILE	Peak Reflow Temperature (Cel)	235
Power Supplies !	3.3 V	Qualification Status !	Not Qualified
Refresh Cycles	4096	Seated Height-Max	1.2 mm
Self Refresh	YES	Sequential Burst Length	1,2,4,8,FP
Standby Current-Max	0.002 A	Supply Current-Max	0.33 mA
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	3 V
Supply Voltage-Nom (Vsup)	3.3 V	Surface Mount !	YES
Technology	CMOS	Temperature Grade !	COMMERCIAL
Terminal Finish	Tin/Lead (Sn/Pb)	Terminal Form !	GULL WING
Terminal Pitch !	0.8 mm	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Width	10.16 mm

Specification Comparison

MT48LC8M16A2TG-75 vs MT48LC8M16A2TG-75IT vs MT48LC8M16A2TG-7E MT48LC8M16A2P-75IT:G vs MT48LC8M16A2TG-75IT vs MT48LC8M16A2TG-7E

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification MT48LC8M16A2TG-7E PDF Download