MTD2955E
P-channel MOSFET transistor in TO-252AA packageMTD2955E
P-channel MOSFET transistor in TO-252AA package
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Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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Example
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Tape and Reel
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Tube or Tray
MTD2955E DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The MTD2955E is a Power MOSFET transistor manufactured by STMicroelectronics. It is designed for power switching applications in industrial and automotive environments. This transistor has a maximum drain-source voltage of 60V and a continuous drain current of 11A, making it suitable for a wide range of applications. The MTD2955E has a low on-resistance of 0.12 ohms, which helps reduce power loss and improve efficiency in switching circuits. It also has a fast switching speed, with a typical turn-on time of 5.2ns and turn-off time of 10ns, making it suitable for high-frequency switching applications.This transistor is housed in a TO-220 package, which provides good thermal performance and easy mounting on a heatsink. The MTD2955E has a operating temperature range of -55°C to 175°C, making it suitable for harsh operating environments.
Key Features
- High current capability
- Low collector-emitter saturation voltage
- Enhanced 30:1 SOA capability
- Stable performance over a wide temperature range
- Designed for general-purpose amplifier and switching applications
- RoHS compliant
Application
- Power management in automotive systems
- Industrial power control applications
- Motor control applications
- Renewable energy systems
- Robotics and automation systems
- LED lighting systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | No | Part Life Cycle Code | Obsolete |
Pin Count ! | 3 | Reach Compliance Code | |
ECCN Code | EAR99 | HTS Code ! | 8541.29.00.95 |
Avalanche Energy Rating (Eas) | 216 mJ | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 V | Drain Current-Max (Abs) (ID) | 12 A |
Drain Current-Max (ID) | 12 A | Drain-source On Resistance-Max | 0.3 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e0 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode ! | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Polarity/Channel Type | P-CHANNEL | Power Dissipation-Max (Abs) | 75 W |
Pulsed Drain Current-Max (IDM) | 36 A | Qualification Status ! | Not Qualified |
Surface Mount ! | YES | Terminal Finish | TIN LEAD |
Terminal Form ! | GULL WING | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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