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MTD3055V
Power MOSFET 12 Amps, 60 Volts N-Channel DPAK
MTD3055V
Power MOSFET 12 Amps, 60 Volts N-Channel DPAK
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Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
About Payment
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If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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Cut Tape
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MTD3055V DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $2.972 | $2.97 |
| 10 | $2.627 | $26.27 |
| 30 | $2.423 | $72.69 |
| 100 | $2.214 | $221.40 |
| 500 | $2.118 | $1,059.00 |
| 1000 | $2.075 | $2,075.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
N–Channel Enhancement–Mode Silicon GateTMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.15 OHMTMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOSE–FET designs,TMOSV is designed to withstand high energy in the avalancheand commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridgecircuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. New Features of TMOS V • On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on)Technology • Faster Switching than E–FET Predecessors Features Common to TMOS V and TMOS E–FETS • Avalanche Energy Specified • IDSSand VDS(on)Specified at Elevated Temperature • Static Parameters are the Same for both TMOS V and TMOS E–FET • Surface Mount Package Available in 16 mm 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
Key Features
- On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on)Technology
- Faster Switching than E–FET Predecessors Features Common to TMOS V and TMOS E–FETS
- Avalanche Energy Specified
- IDSSand VDS(on)Specified at Elevated Temperature
- Static Parameters are the Same for both TMOS V and TMOS E–FET
- Surface Mount Package Available in 16 mm 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Manufacturer | Fairchild Semiconductor | Product Category ! | FETs - Single |
| Packaging ! | Reel | Part-Aliases | SMD/SMT |
| Unit-Weight | 1 Channel | Mounting-Style | 3.9 W |
| Package-Case | + 175 C | Technology | - 55 C |
| Number-of-Channels | 20 V | Configuration | 12 A |
| Transistor-Type | 60 V | Pd-Power-Dissipation | 150 mOhms |
| Maximum Operating Temperature ! | 10 ns |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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