MTP20N15E
Power MOSFET with a voltage rating of 150V, a current rating of 20A, and a resistance of 130 milliohms in a single N-Channel TO-220 packageMTP20N15E
Power MOSFET with a voltage rating of 150V, a current rating of 20A, and a resistance of 130 milliohms in a single N-Channel TO-220 package
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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MTP20N15E DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The MTP20N15E power MOSFET transistor stands out for its exceptional performance and reliability in high-current applications. With a drain-source voltage rating of 150V and a continuous drain current of 20A, this N-channel device is designed to meet the demands of power management and control applications. Its TO-220 package design ensures easy mounting and efficient heat dissipation, guaranteeing optimal performance even under high-power conditions. The MOSFET's low on-state resistance of 0.2 ohms minimizes power losses and improves overall efficiency, making it a valuable component in various electrical systems
Key Features
- High voltage N-channel MOSFET
- Enhanced avalanche capability
- Low on-resistance
- Fast switching speed
- Excellent dV/dt ruggedness
- 100% avalanche tested
- Low gate charge
- RoHS compliant
Application
- Automotive
- Industrial
- Consumer electronics
- Power supplies
- Motor control
- Solar inverters
- Battery management systems
- Telecommunications
- LED lighting
- Medical devices
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | No | Rohs Code | No |
Part Life Cycle Code | Obsolete | Part Package Code | TO-220AB |
Pin Count ! | 3 | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Avalanche Energy Rating (Eas) | 60 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 150 V | Drain Current-Max (Abs) (ID) | 20 A |
Drain Current-Max (ID) | 20 A | Drain-source On Resistance-Max | 0.13 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e0 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | 235 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 112 W |
Pulsed Drain Current-Max (IDM) | 60 A | Qualification Status ! | Not Qualified |
Surface Mount ! | NO | Terminal Finish | TIN LEAD |
Terminal Form ! | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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