NVBG040N120SC1

Effective Inventory7,058

Silicon Carbide (SiC) N-Channel Transistor designed for Automotive Use, featuring a voltage tolerance of 1

  • Manufacturer Part # : NVBG040N120SC1

  • Package/Case: D2PAK

  • Part Status : Active

  • Brand: Onsemi

  • Product Categories : Single FETs, MOSFETs

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Service & Packaging

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NVBG040N120SC1 DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $24.020 $24.02
30 $20.406 $612.18

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

Rapid Quote

Please submit RFQ for NVBG040N120SC1 or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The NVBG040N120SC1 is a Silicon Carbide (SiC) MOSFET designed for N-Channel applications. With a low on-resistance of 40 mΩ, this MOSFET is capable of handling high power levels at voltages up to 1200 V. The M1 package type and D2PAK-7L configuration make it suitable for a wide range of automotive applications where efficiency and reliability are crucial

Key Features

  • Produced by ON Semiconductor
  • Part number NVBG040N120SC1
  • 1200V IGBT with NPT3 design
  • Offers low VCE(on) of 2.5V
  • Maximum collector current rating of 40A
  • Integrated anti-parallel diode
  • Designed for high frequency switching applications

Application

  • Smart power management
  • Sustainable energy grids
  • Efficient power conversion

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Part Life Cycle Code Active
Reach Compliance Code ECCN Code EAR99
Factory Lead Time 52 Weeks Date Of Intro 2020-02-21
Avalanche Energy Rating (Eas) 578 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 1200 V
Drain Current-Max (Abs) (ID) 60 A Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.056 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263CB JESD-30 Code R-PSSO-G7
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 7
Operating Mode ! ENHANCEMENT MODE Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 357 W Pulsed Drain Current-Max (IDM) 240 A
Reference Standard AEC-Q101 Surface Mount ! YES
Terminal Finish MATTE TIN Terminal Form ! GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON CARBIDE
Turn-off Time-Max (toff) 66 ns Turn-on Time-Max (ton) 66 ns
Manufacturer onsemi Product Category ! MOSFET
RoHS Details Technology SiC
Mounting Style SMD/SMT Package / Case D2PAK-7L
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 1.2 kV Id - Continuous Drain Current 60 A
Rds On - Drain-Source Resistance 56 mOhms Vgs - Gate-Source Voltage - 15 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 4.3 V Qg - Gate Charge 106 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature ! + 175 C
Pd - Power Dissipation 357 W Channel Mode Enhancement
Brand onsemi Fall Time 9 ns
Forward Transconductance - Min 20 S Product Type ! MOSFET
Rise Time ! 20 ns Factory Pack Quantity 800
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 30 ns Typical Turn-On Delay Time 17 ns
Unit Weight 0.164906 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification NVBG040N120SC1 PDF Download

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