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NVHL020N090SC1
MOSFET with a resistance of 20 milliohms and a voltage rating of 900 volts
NVHL020N090SC1
MOSFET with a resistance of 20 milliohms and a voltage rating of 900 volts
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Manufacturer Part # : NVHL020N090SC1
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Package/Case: TO-247-3LD
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Part Status : Active
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Brand: Onsemi
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Product Categories : Single FETs, MOSFETs
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Service & Packaging
Service & Packaging
About After Sales Service
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Initiate the application within 90 days from the shipment date.
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NVHL020N090SC1 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
Introducing the NVHL020N090SC1 Silicon Carbide (SiC) MOSFET, a cutting-edge solution for automotive power electronics. This N-Channel MOSFET features a low on-resistance of 20 mohm and a high voltage rating of 900 V, providing optimal performance in demanding applications. Its TO247-3L package ensures efficient heat dissipation, making it suitable for automotive environments. With automotive qualification and 450 units per tube, this MOSFET is ready to meet the rigorous demands of the automotive industry
Key Features
- Part Number: NVHL020N090SC1
- Manufacturer: Vishay
- Transistor Type: N-Channel
- Drain-Source Voltage: 900V
- Current Rating: 20A
- Package Type: TO-247AC
- RoHS Compliant: Yes
Application
- Power distribution
- Hybrid vehicles
- HVAC systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | Yes | Part Life Cycle Code | Active |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| Factory Lead Time | 54 Weeks | Date Of Intro | 2019-10-28 |
| Avalanche Energy Rating (Eas) | 264 mJ | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 900 V | Drain Current-Max (Abs) (ID) | 118 A |
| Drain Current-Max (ID) | 118 A | Drain-source On Resistance-Max | 0.028 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 24 pF |
| JEDEC-95 Code | TO-247 | JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
| Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 503 W | Pulsed Drain Current-Max (IDM) | 472 A |
| Reference Standard | AEC-Q101 | Surface Mount ! | NO |
| Terminal Finish | MATTE TIN | Terminal Form ! | THROUGH-HOLE |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON CARBIDE |
| Manufacturer | onsemi | Product Category ! | MOSFET |
| RoHS | Details | Technology | SiC |
| Mounting Style | Through Hole | Package / Case | TO-247-3 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 900 V | Id - Continuous Drain Current | 118 A |
| Rds On - Drain-Source Resistance | 28 mOhms | Vgs - Gate-Source Voltage | - 8 V, + 22 V |
| Vgs th - Gate-Source Threshold Voltage | 4.3 V | Qg - Gate Charge | 196 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 175 C |
| Pd - Power Dissipation | 503 W | Channel Mode | Enhancement |
| Qualification | AEC-Q101 | Brand | onsemi |
| Fall Time | 13 ns | Forward Transconductance - Min | 49 S |
| Product Type ! | MOSFET | Rise Time ! | 63 ns |
| Factory Pack Quantity | 30 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 55 ns |
| Typical Turn-On Delay Time | 40 ns | Unit Weight | 0.211644 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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