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NX2301PVL
TO-236AB MOSFET NX2301P
NX2301PVL
TO-236AB MOSFET NX2301P
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
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Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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NX2301PVL DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
NX2301PVL is a P-channel MOSFET (metal-oxide-semiconductor field-effect transistor) with a maximum voltage rating of 20V and a maximum current rating of 2A at a temperature of 25°C. This surface-mount transistor is designed to handle power dissipation of up to 400mW at the same temperature. The TO-236AB package type is a small surface-mount package that is perfect for space-constrained applications while still providing efficient power handling capabilities. It is important to note that this component is sensitive to electrostatic discharge (ESD), so proper handling procedures should be followed to prevent damage. This MOSFET can be used in a variety of applications, such as power management in portable devices, battery charging circuits, and load switching. Its low on-resistance ensures minimal power loss and high efficiency in these applications. The P-channel design allows for easy control of the flow of current in the circuit, providing flexibility in circuit design.
Key Features
- Ultra-high resolution of 4K
- Power-over-Ethernet for simplified installation
- Wide dynamic range for clear imaging in various lighting conditions
- Onboard storage for recording and playback
- Remote access for real-time monitoring
- Compatible with leading VMS platforms
Application
- Video conferencing
- Telemedicine
- Remote monitoring
- Surveillance systems
- Security systems
- Home automation
- Industrial automation
- Robotics
- Smart city applications
- Traffic management
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Manufacturer | Nexperia | Product Category ! | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | SOT-23-3 |
| Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 20 V | Id - Continuous Drain Current | 2 A |
| Rds On - Drain-Source Resistance | 120 mOhms | Vgs - Gate-Source Voltage | - 8 V, + 8 V |
| Vgs th - Gate-Source Threshold Voltage | 500 mV | Qg - Gate Charge | 4.5 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
| Pd - Power Dissipation | 710 mW | Channel Mode | Enhancement |
| Brand | Nexperia | Configuration | Single |
| Fall Time | 25 ns | Product Type ! | MOSFET |
| Rise Time ! | 15 ns | Factory Pack Quantity | 10000 |
| Subcategory | MOSFETs | Transistor Type | 1 P-Channel Trench MOSFET |
| Typical Turn-Off Delay Time | 50 ns | Typical Turn-On Delay Time | 7 ns |
| Part # Aliases | 934064624235 | Unit Weight | 0.000282 oz |
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