QPD0060
RF JFET Transistors with GaN technology capable of operating at frequencies up to 3.6GHz and a power output of 90W at 48VQPD0060
RF JFET Transistors with GaN technology capable of operating at frequencies up to 3.6GHz and a power output of 90W at 48V
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Manufacturer Part # : QPD0060
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Package/Case: QFN
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Brand: QORVO
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Product Categories : RF FETs, MOSFETs
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
About Payment
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If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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QPD0060 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
QPD0060 is a high-power microwave transistor specifically designed for RF and microwave applications. It belongs to the GaN (Gallium Nitride) technology family and is developed by Qorvo, a leading provider of innovative RF solutions. The QPD0060 offers exceptional performance in terms of power, efficiency, and reliability. It operates at a frequency range of 1.2 to 1.4 GHz and can deliver an output power of up to 60 watts with a gain of around 20 dB. The device has a high power-added efficiency, making it suitable for power amplification tasks in various communication systems, radar systems, and other military and commercial applications requiring high-power RF signals. With its compact size and advanced design, the QPD0060 is easy to integrate into different RF modules and systems. It features a rugged construction that ensures long-term stability and performance under demanding operating conditions. The transistor also has built-in protection circuitry to safeguard against over-voltage, over-current, and over-temperature conditions, further enhancing its reliability. In conclusion, QPD0060 is a cutting-edge microwave transistor that offers high power, efficiency, and reliability for a wide range of RF and microwave applications. Its advanced features and performance make it a preferred choice for professionals working in the RF industry
Key Features
- High power density
- High gain pseudomorphic HEMT technology
- Operates from 3.4-3.6 GHz
- Capable of handling high input power levels
- Low thermal resistance
- Designed for radar and communication applications
- High reliability and ruggedness
- RoHS compliant
Application
- Telecommunications
- Radar systems
- Satellite communication
- Wireless communication
- Defense systems
- Signal amplification
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