RF4G060ATTCR
DFN2020 MOSFET with -40V and -6A power ratingRF4G060ATTCR
DFN2020 MOSFET with -40V and -6A power rating
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Manufacturer Part # : RF4G060ATTCR
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Package/Case: PowerUDFN-6
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Part Status : ACTIVE
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Brand: Rohm Semiconductor
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Product Categories : Single FETs, MOSFETs
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RoHS:
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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Tube or Tray
RF4G060ATTCR DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
RF4G060ATTCR is a P-Channel MOSFET electronic component with a maximum voltage rating of 40V and a maximum current rating of 6A at a temperature of 25 degrees Celsius. It has a power dissipation of 2W at the same temperature. The component is designed for surface mount applications and belongs to the HUML2020L8 package type. P-Channel MOSFETs like RF4G060ATTCR are commonly used in electronic circuits where low power consumption and high efficiency are desired. They are often utilized in power management circuits, battery chargers, and voltage regulators. P-Channel MOSFETs are known for their ability to switch off when a positive voltage is applied to their gate terminal, making them ideal for circuits that require reverse polarity protection. The RF4G060ATTCR offers a compact and efficient solution for power control in various electronic devices. Its surface mount design makes it easy to integrate into printed circuit boards, saving space and enabling high-density board layouts.
Key Features
- Low on - resistance
- High power small mold package (HUML2020L8)
- Pb-free plating ; RoHS compliant
- Halogen Free
Application
- Wireless communication devices
- Cellular phones
- Smartphones
- Tablets
- Laptops
- GPS systems
- IoT devices
- Automotive electronics
- Medical devices
- Industrial automation equipment
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | DFN2020-8S | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 40 V |
Id - Continuous Drain Current | 6 A | Rds On - Drain-Source Resistance | 40 mOhms |
Vgs - Gate-Source Voltage | - 10 V, + 10 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 17.2 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 2 W |
Channel Mode | Enhancement | Brand | ROHM Semiconductor |
Configuration | Single | Fall Time | 45 ns |
Product Type ! | MOSFET | Rise Time ! | 18 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P - Channel | Typical Turn-Off Delay Time | 83 ns |
Typical Turn-On Delay Time | 9.5 ns | Part # Aliases | RF4G060AT |
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