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SPW55N80C3
SPW55N80C3 is an 800V-rated Power Field-Effect Transistor with an on-resistance of 0
SPW55N80C3
SPW55N80C3 is an 800V-rated Power Field-Effect Transistor with an on-resistance of 0
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Service & Packaging
Service & Packaging
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SPW55N80C3 DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $17.004 | $17.00 |
| 10 | $16.466 | $164.66 |
| 30 | $15.534 | $466.02 |
| 100 | $14.722 | $1,472.20 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
The SPW55N80C3 is a power MOSFET semiconductor device manufactured by Infineon Technologies. It is designed for high current, high voltage applications and is housed in a TO-247 package. This MOSFET has a drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 46A. The on-state resistance (R_DS(on)) is 80mΩ, which allows for efficient power switching and minimal power loss. The gate threshold voltage (V_GS(th)) is typically 2.3V, making it easy to drive with standard logic level signals.The SPW55N80C3 features enhanced switching performance and reliability due to its advanced technology and robust design. It is suitable for use in a wide range of applications such as power supplies, motor control, inverters, and other high power applications.
Key Features
- 800V, 55A N-channel power MOSFET
- Low on-resistance of 0.040 ohms
- High current capability
- Fast switching performance
- Improved gate charge and robustness
- Designed for high power applications
- Comprehensive protection features
- TO-247 package for easy mounting
Application
- Switch-mode power supplies
- Motor control
- DC-DC and AC-DC converters
- Lighting applications
- Electric vehicles
- Solar inverters
- Uninterruptible power supplies (UPS)
- Industrial automation
- Renewable energy systems
- Power distribution systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| IDpuls max | 150.0 A | RthJC max | 0.25 K/W |
| RthJA max | 62.0 K/W | Ptot max | 500.0 W |
| VDS max | 800.0 V | Polarity | N |
| ID max | 54.9 A | RDS (on) max | 85.0 mΩ |
| Mounting | THT | Special Features | price/performance |
| Package | TO-247 | VGS(th) max | 3.9 V |
| VGS(th) min | 2.1 V | Operating Temperature max | 150.0 °C |
| Operating Temperature min | -55.0 °C |
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