SSM6K819R,LXHF
Power Field-Effect Transistor SSM6K819R,LXHFSSM6K819R,LXHF
Power Field-Effect Transistor SSM6K819R,LXHF
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Manufacturer Part # : SSM6K819R,LXHF
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Package/Case: SMD-6
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Part Status : Active
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Product Categories : Single FETs, MOSFETs
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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SSM6K819R,LXHF DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
Boasting a robust power rating of 20V and a maximum current rating of 6A, the SSM6K819R,LXHF dual N-channel MOSFET transistor is a reliable choice for applications that demand high-speed switching and low on-resistance. Its ultra-low gate threshold voltage of 1.5V makes it an ideal option for use in battery-powered devices and other low-voltage applications, while its minimal on-resistance of 0.03 ohms helps to reduce power loss and increase efficiency in high-current scenarios. The small and lightweight package of this transistor, measuring just 2mm x 2mm x 0.7mm, makes it a perfect fit for space-constrained environments such as mobile devices, wearable electronics, and automotive systems
Key Features
- 6 V gate-drive MOSFET
- Low on-resistance
- 1.9 A drain current
- Fast switching speed
- Low threshold voltage
- Suitable for high-speed switching applications
Application
- Power management systems
- Battery management systems
- Smart grid applications
- Solar inverters
- Electric vehicle charging systems
- Industrial power supplies
- Home appliances
- LED lighting systems
- Motor control systems
- Robotics and automation
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TSOP6F | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 10 A | Rds On - Drain-Source Resistance | 20.9 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Qg - Gate Charge | 8.5 nC | Maximum Operating Temperature ! | + 175 C |
Pd - Power Dissipation | 1.5 W | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Brand | Toshiba |
Configuration | Single | Fall Time | 8 ns |
Product Type ! | MOSFET | Rise Time ! | 27 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 30 ns | Typical Turn-On Delay Time | 46 ns |
Part # Aliases | SSM6K819R,LXHF(B |
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