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SSM6L05FU
Small signal MOSFET transistor capable of handling a maximum current of 400 mA and a voltage of 20 V
SSM6L05FU
Small signal MOSFET transistor capable of handling a maximum current of 400 mA and a voltage of 20 V
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SSM6L05FU DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The SSM6L05FU is a lateral N-channel small signal field-effect transistor (FET) from the SSM6 series manufactured by Toshiba. It is designed for high-frequency amplifier applications and features a low gate-source cutoff voltage, making it suitable for use in low-voltage circuits. The SSM6L05FU has a compact SOT-666 surface-mount package, making it suitable for use in space-constrained applications such as mobile devices and portable electronics. It has a maximum drain-source voltage rating of 20V and a continuous drain current rating of 100mA, making it suitable for low-power applications. This transistor has a typical cutoff frequency of 5GHz and a typical power gain of 10dB, making it suitable for high-frequency amplification. It has a low on-state resistance of 3.5Ω, ensuring low power dissipation and high efficiency in operation. The SSM6L05FU has a wide operating temperature range of -55°C to 150°C, making it suitable for use in a variety of environments. It is RoHS-compliant, ensuring that it meets international standards for environmental protection.
Key Features
- 6A, 60V N-channel MOSFET
- Suitable for high current applications
- Low on-resistance
- Low gate charge
- Fast switching speed
- Logic-level gate drive
- TO-252-3L package
- RoHS compliant
- High efficiency and reliability
Application
- Automotive electronics
- Industrial motor control
- Power management systems
- Home appliances
- Healthcare equipment
- Consumer electronics
- Solar power inverters
- Battery management systems
- DC-DC converters
- LED lighting
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Part Life Cycle Code | Obsolete | Pin Count ! | 6 |
| Reach Compliance Code | ECCN Code | EAR99 | |
| Configuration | SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | DS Breakdown Voltage-Min | 20 V |
| Drain Current-Max (Abs) (ID) | 0.2 A | Drain Current-Max (ID) | 0.4 A |
| Drain-source On Resistance-Max | 1.2 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G6 | JESD-609 Code | e0 |
| Number of Elements | 2 | Number of Terminals | 6 |
| Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Power Dissipation-Max (Abs) | 0.3 W | Qualification Status ! | Not Qualified |
| Surface Mount ! | YES | Terminal Finish | TIN LEAD |
| Terminal Form ! | GULL WING | Terminal Position | DUAL |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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